FDMS6681Z MOSFET POWERTRENCH , P-Channel -30 V, -122 A, 3.2 m General Description www.onsemi.com The FDMS6681Z has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest r and ESD DS(on) protection. D 5 4 G Features D 6 3 S Max r = 3.2 m at V = 10 V, I = 21.1 A DS(on) GS D Max r = 5.0 m at V = 4.5 V, I = 15.7 A DS(on) GS D D 7 2 S Advanced Package and Silicon Combination for Low r DS(on) D 8 1 S HBM ESD Protection Level of 8 kV Typical (Note 3) MSL1 Robust Package Design RoHS Compliant Pin 1 S Applications S S G Load Switch in Notebook and Server Notebook Battery Pack Power Management D D D D MOSFET MAXIMUM RATINGS (T = 25C unless otherwise noted) A Top Bottom Symbol Parameter Ratings Unit Power 56 (PQFN8) V Drain to Source Voltage 30 V DS CASE 483AE V Gate to Source Voltage 25 V GS I Drain Current Continuous T = 25C (Note 5) 122 A D C MARKING DIAGRAM Continuous T = 100C 77 C (Note 5) Y&Z&3&K Continuous T = 25C 21.1 A FDMS (Note 1a) 6681Z Pulsed (Note 4) 600 P Power dissipation T = 25C 73 W D C Power dissipation T = 25C (Note 1a) 2.5 A Y = ON Semiconductor Logo &Z = Assembly Plant Code T Operating and Storage Junction Temperature 55 to C J, T Range +150 &3 = Numeric Date Code STG &K = Lot Code Stresses exceeding those listed in the Maximum Ratings table may damage the FDMS6681Z = Specific Device Code device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION THERMAL CHARACTERISTICS See detailed ordering and shipping information on page 2 of this data sheet. Symbol Parameter Ratings Unit R Thermal Resistance, Junction to Case 1.7 C/W JC R Thermal Resistance, Junction to Ambient 50 JA (Note 1a) Semiconductor Components Industries, LLC, 2009 1 Publication Order Number: May, 2019 Rev. 3 FDMS6681Z/DFDMS6681Z PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Shipping FDMS6681Z FDMS6681Z Power 56 3000 Units/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS BV Drain to Source Breakdown Voltage I = 250 A, V = 0 V 30 V DSS D GS Breakdown Voltage Temperature I = 250 A, referenced to 25C 20 mV/C BV D DSS Coefficient T J I Zero Gate Voltage Drain Current V = 24 V, V = 0 V 1 A DSS DS GS I Gate to Source Leakage Current V = 25 V, V = 0 V 10 A GSS GS DS ON CHARACTERISTICS V Gate to Source Threshold Voltage V = V , I = 250 A 1 1.7 3 V GS(th) GS DS D Gate to Source Threshold Voltage I = 250 A, referenced to 25C 7 mV/C V D GS(th) Temperature Coefficient T J r Static Drain to Source On Resistance V = 10 V, I = 22.1 A 2.7 3.2 m DS(on) GS D V = 4.5 V, I = 15.7 A 4.0 5.0 GS D V = 10 V, I = 22.1 A, 3.9 5.0 GS D T = 125C J g Forward Transconductance V = 10 V, I = 22.1 A 143 S FS DD D DYNAMIC CHARACTERISTICS V = 15 V, V = 0 V, f = 1MHz pF C Input Capacitance 7803 10380 iss DS GS C Output Capacitance 1540 2050 oss C Reverse Transfer Capacitance 1345 2020 rss SWITCHING CHARACTERISTICS t Turn On Delay Time V = 15 V, I = 22.1 A, 15 24 ns d(on) DD D V = 10 V, R = 6 GS GEN t Rise Time 38 61 r t Turn Off Delay Time 260 416 d(off) t Fall Time 197 316 f V = 0 V to 10 V Q Total Gate Charge 172 241 nC GS g Q Total Gate Charge 97 136 V = 0 V to 5 V g GS V = 15 V, DD Q Gate to Source Charge 22 gs i = 22.1 A D Q Gate to Drain Miller Charge 46 gd DRAINSOURCE DIODE CHARACTERISTICS V Source to Drain Diode Forward Voltage V = 0 V, I = 2.1 A (Note 2) 0.68 1.2 V SD GS S V = 0 V, I = 22.1 A (Note 2) 0.79 1.25 GS S t Reverse Recovery Time I = 22.1 A, di/dt = 100 A/ s 44 71 ns rr F Q Reverse Recovery Charge 39 63 nC rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2
