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FDMS7580 N-Channel Power Trench MOSFET October 2014 FDMS7580 N-Channel Power Trench MOSFET 25 V, 7.5 m Features General Description Max r = 7.5 m at V = 10 V, I = 15 A This N-Channel MOSFET has been designed specifically to DS(on) GS D improve the overall efficiency and to minimize switch node Max r = 11.1 m at V = 4.5 V, I = 12 A DS(on) GS D ringing of DC/DC converters using either synchronous or Advanced Package and Silicon combination for low r conventional switching PWM controllers. It has been optimized DS(on) and high efficiency for low gate charge, low r fast switching speed and body DS(on), diode reverse recovery performance. Next generation enhanced body diode technology, engineered for soft recovery Applications MSL1 robust package design Control MOSFET for Synchronous Buck Converters 100% UIL tested Notebook RoHS Compliant Server Telecomm High Efficiency DC-DC Switch Mode Power Supplies Bottom Top Pin 1 S G D 5 4 S S G D S 6 3 S D 7 2 D S D 8 1 D D D Power 56 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 25 V DS V Gate to Source Voltage (Note 4) 20 V GS Drain Current -Continuous (Package limited) T = 25 C 28 C -Continuous (Silicon limited) T = 25 C 49 C I A D -Continuous T = 25 C (Note 1a) 15 A -Pulsed 60 E Single Pulse Avalanche Energy (Note 3) 32 mJ AS Power Dissipation T = 25 C 27 C P W D Power Dissipation T = 25 C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 4.6 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS7580 FDMS7580 Power 56 13 12 mm 3000 units 1 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com FDMS7580 Rev.C1