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FDMS7680 N-Channel PowerTrench MOSFET October 2014 FDMS7680 N-Channel PowerTrench MOSFET 30 V, 6.9 m Features General Description This N-Channel MOSFET has been designed specifically to Max r = 6.9 m at V = 10 V, I = 14 A DS(on) GS D improve the overall efficiency and to minimize switch node Max r = 11 m at V = 4.5 V, I = 11 A DS(on) GS D ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized Advanced Package and Silicon combination for low r DS(on) for low gate charge, low r fast switching speed and body DS(on), and high efficiency diode reverse recovery performance. Next generation enhanced body diode technology, engineered for soft recovery. Applications IMVP Vcore Switching for Notebook MSL1 robust package design VRM Vcore Switching for Desktop and Server 100% UIL tested OringFET / Load Switch RoHS Compliant DC-DC Conversion Top Bottom Pin 1 S D S S S S G D S D D D D G D D Power 56 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage +/-20 V GS Drain Current -Continuous (Package limited) T = 25 C 28 C -Continuous (Silicon limited) T = 25 C 53 C I A D -Continuous T = 25 C (Note 1a) 14 A -Pulsed 80 (Note 4) E Single Pulse Avalanche Energy (Note 3) 29 mJ AS Power Dissipation T = 25 C 33 C P W D Power Dissipation T = 25 C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 3.7 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS7680 FDMS7680 Power 56 13 12 mm 3000 units 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDMS7680 Rev.C3