MOSFET - NChannel, POWERTRENCH 40 V, 49 A, 2.2 m FDMS8460 General Description www.onsemi.com This NChannel MOSFET is produced using ON Semiconductors advanced POWERTRENCH process that has been especially tailored to minimize the onstate resistance and yet maintain superior S switching performance. D Features D S Max r = 2.2 m at V = 10 V, I = 25 A DS(on) GS D D S Max r = 3.0 m at V = 4.5 V, I = 21.7 A DS(on) GS D Advanced Package and Silicon combination for low r DS(on) G D MSL1 robust package design 100% UIL tested N-Channel MOSFET RoHS Compliant Applications DCDC Conversion Pin 1 MAXIMUM RATINGS (T = 25C unless otherwise noted) A Top Bottom Power 56 Symbol Parameter Value Unit (PQFN8) V Drain to Source Voltage 40 V DS CASE 483AE V Gate to Source Voltage 20 V GS I Drain Current: A D MARKING DIAGRAM Continuous (Package limited) T = 25C 49 C Continuous (Silicon limited) T = 25C 167 C Continuous T = 25C (Note 1a) 25 A S D Pulsed 160 Y&Z&3&K S D E Single Pulse Avalanche Energy (Note 3) 864 mJ AS FDMS S D 8460 P Power Dissipation: W D T = 25C 104 C G D T = 25C (Note 1a) 2.5 A T , T Operating and Storage Junction Tempera- 55 to C J STG Y = ON Semiconductor Logo ture Range +150 &Z = Assembly Plant Code &3 = Data Code (Year & Week) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be &K = Lot assumed, damage may occur and reliability may be affected. FDMS8460 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: January, 2020 Rev. 5 FDMS8460/DFDMS8460 PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Quantity FDMS8460 FDMS8460 Power 56 (PQFN8) 3000/Tape&Reel (Pb-Free / Halogen Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case 1.2 C/W JC R Thermal Resistance, Junction to Ambient (Note 1a) 50 JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Condition Min Typ Max Unit OFF CHARACTERISTICS BV Drain to Source Breakdown Voltage I = 250 A, V = 0 V 40 V DSS D GS BV Breakdown Voltage Temperature I = 250 A, referenced to 25C 32 mV/C DSS D / T Coefficient J I Zero Gate Voltage Drain Current V = 32 V, V = 0 V 1 A DSS DS GS I Gate to Source Leakage Current, Forward V = 20 V, V = 0 V 100 nA GSS GS DS ON CHARACTERISTICS V Gate to Source Threshold Voltage V = V , I = 250 A 1.0 1.9 3.0 V GS(th) GS DS D V Gate to Source Threshold Voltage I = 250 A, referenced to 25C 7.5 mV/C GS(th) D / T Temperature Coefficient J r Static Drain to Source On Resistance V = 10 V, I = 25 A 2.0 2.2 m DS(on) GS D V = 4.5 V, I = 21.7 A 2.6 3.0 GS D V = 10 V, I = 25 A, T = 125C 2.6 3.3 GS D J g Forward Transconductance V = 5 V, I = 25 A 137 S FS DS D DYNAMIC CHARACTERISTICS C Input Capacitance V = 20 V, V = 0 V, f = 1 MHz 5415 7205 pF DS GS iss C Output Capacitance 1470 1955 pF oss C Reverse Transfer Capacitance 170 250 pF rss R Gate Resistance f = 1MHz 0.1 1.4 3.1 g SWITCHING CHARACTERISTICS t Turn-On Delay Time V = 20 V, I = 25 A, V = 10 V, 19 35 ns d(on) DD D GS R = 6 GEN t Rise Time 9 19 ns r t Turn-Off Delay Time 48 78 ns d(off) t Fall Time 7 14 ns f Q Total Gate Charge V = 0 V to 10 V, V = 20 V, 78 110 nC g GS DD I = 25 A D V = 0 V to 4.5 V, V = 20 V, 36 51 nC GS DD I = 25 A D Q Gate to Source Charge V = 20 V, I = 25 A 15 nC gs DD D Q Gate to Drain Miller Charge 10 nC gd www.onsemi.com 2