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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. TM FDMS8558SDC N-Channel PowerTrench SyncFET July 2013 FDMS8558SDC TM N-Channel PowerTrench SyncFET 25 V, 90 A, 1.5 m Features General Description TM TM Dual Cool PQFN package This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process. Max r = 1.5 m at V = 10 V, I = 38 A DS(on) GS D Advancements in both silicon and package technologies have Max r = 1.7 m at V = 4.5 V, I = 36 A been combined to offer the lowest r while maintaining DS(on) GS D DS(on) excellent switching performance by extremely low Junction-to- High performance technology for extremely low r DS(on) Ambient thermal resistance. This device has the added benefit TM SyncFET Schottky Body Diode of an efficient monolithic Schottky body diode. RoHS Compliant Applications Synchronous Rectifier for DC/DC Converters Telecom Secondary Side Rectification High End Server/Workstation Vcore Low Side S S D G 5 4 S G Pin 1 D 6 3 S D 7 2 S D D D S D 8 1 D Top Power 56 Bottom MOSFET Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 25 V DS V Gate to Source Voltage 12 V GS Drain Current -Continuous (Package limited) T = 25 C 90 C I -Continuous T = 25 C (Note 1a) 38 A D A -Pulsed 140 E Single Pulse Avalanche Energy (Note 3) 145 mJ AS Power Dissipation T = 25 C 89 C P W D Power Dissipation T = 25 C (Note 1a) 3.3 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case (Top Source) 2.8 JC R Thermal Resistance, Junction to Case (Bottom Drain) 1.4 JC R Thermal Resistance, Junction to Ambient (Note 1a) 38 JA R Thermal Resistance, Junction to Ambient (Note 1b) 81 JA C/W R Thermal Resistance, Junction to Ambient (Note 1i) 16 JA R Thermal Resistance, Junction to Ambient (Note 1j) 23 JA R Thermal Resistance, Junction to Ambient (Note 1k) 11 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 09DC FDMS8558SDC Power 56 13 12 mm 3000 units 2012 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDMS8558SDC Rev.C2