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TM FDMS8560S N-Channel PowerTrench SyncFET November 2014 FDMS8560S TM N-Channel PowerTrench SyncFET 25 V, 70 A, 1.8 m Features General Description TM Max r = 1.8 m at V = 10 V, I = 30 A This N-Channel SyncFET is produced using Fairchild DS(on) GS D Semiconductors advanced PowerTrench process. Max r = 2.1 m at V = 4.5 V, I = 28 A DS(on) GS D Advancements in both silicon and package technologies have High performance technology for extremely low r been combined to offer the lowest r while maintaining DS(on) DS(on) excellent switching performance by extremely low Junction-to- TM SyncFET Schottky Body Diode Ambient thermal resistance. This device has the added benefit RoHS Compliant of an efficient monolithic Schottky body diode. Applications Synchronous Rectifier for DC/DC Converters Telecom Secondary Side Rectification High End Server/Workstation Vcore Low Side Bottom Top Pin 1 D G S 5 4 S S D G 6 3 S D S 7 2 D S D 8 1 D D D Power 56 MOSFET Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 25 V DS V Gate to Source Voltage 12 V GS Drain Current -Continuous (Package limited) T = 25 C 70 C I -Continuous T = 25 C (Note 1a) 30 A D A -Pulsed 150 E Single Pulse Avalanche Energy (Note 3) 79 mJ AS Power Dissipation T = 25 C 65 C P W D Power Dissipation T = 25 C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case T = 25 C 1.9 JC C C/W R Thermal Resistance, Junction to Ambient T = 25 C (Note 1a) 50 JA A Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 05OD FDMS8560S Power 56 13 12 mm 3000 units 2012 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDMS8560S Rev.D2