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FDMS86105 N-Channel Shielded Gate PowerTrench MOSFET October 2014 FDMS86105 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 26 A, 34 m Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductors advanced PowerTrench process that Max r = 34 m at V = 10 V, I = 6 A DS(on) GS D incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior Max r = 54 m at V = 6 V, I = 4.5 A DS(on) GS D switching performance. Advanced package and silicon combination for low r and DS(on) high efficiency Applications MSL1 robust package design Primary DC-DC 100% UIL tested Secondary DC-DC RoHS Compliant Load Switch Bottom Top Pin 1 S S D S S G D S D S D D G D D D Power 56 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 100 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous T = 25 C 26 C I -Continuous T = 25 C (Note 1a) 6 A D A -Pulsed 30 E Single Pulse Avalanche Energy (Note 3) 50 mJ AS Power Dissipation T = 25 C 48 C P W D Power Dissipation T = 25 C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 2.6 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS86105 FDMS86105 Power 56 13 12 mm 3000 units 2011 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDMS86105 Rev.C2