FDN308P February 2001 FDN308P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged 20 V, 1.5 A. R = 125 m V = 4.5 V DS(ON) GS gate version of Fairchilds advanced PowerTrench R = 190 m V = 2.5 V DS(ON) GS process. It has been optimized for power management applications with a wide range of gate drive voltage Fast switching speed (2.5V 12V). High performance trench technology for extremely Applications low R DS(ON) Power management TM SuperSOT -3 provides low R and 30% higher DS(ON) Load switch power handling capability than SOT23 in the same Battery protection footprint D D S S G TM G SuperSOT -3 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 20 V DSS V Gate-Source Voltage V GSS 12 I Drain Current Continuous (Note 1a) 1.5 A D Pulsed 10 Maximum Power Dissipation (Note 1a) W 0.5 P D (Note 1b) 0.46 T , T Operating and Storage Junction Temperature Range 55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 250 C/W JA Thermal Resistance, Junction-to-Case (Note 1) 75 R C/W JC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 308 FDN308P 7 8mm 3000 units FDN308P Rev B(W) 2001 Fairchild Semiconductor Corporation FDN308P Electrical Characteristics T = 25C unless otherwise noted A Symbol Parameter Test Conditions MinTyp Max Units Off Characteristics BV DrainSource Breakdown Voltage V = 0 V, I = 250 A 20 V DSS GS D BVDSS Breakdown Voltage Temperature I = 250 A,Referenced to 25C 13 mV/C D Coefficient T J I Zero Gate Voltage Drain Current V = 16 V, V = 0 V 1 DSS DS GS A I GateBody Leakage, Forward V = 12 V, V = 0 V 100 nA GSSF GS DS I GateBody Leakage, Reverse V = 12 V V = 0 V 100 nA GSSR GS DS On Characteristics (Note 2) V Gate Threshold Voltage V = V , I = 250 A 0.6 1.0 1.5 V GS(th) DS GS D Gate Threshold Voltage 3 VGS(th) I = 250 A,Referenced to 25C mV/C D Temperature Coefficient TJ R Static DrainSource V = 4.5 V, I = 1.5 A 86 125 DS(on) GS D m OnResistance V = 2.5 V, I = 1.3 A 136 190 GS D 114 178 V = 4.5 V, I = 1.5A T =125C GS D J I OnState Drain Current V = 4.5 V, V = 5 V 5 A D(on) GS DS g Forward Transconductance V = 5 V, I = 1.5 A 12 S FS DS D Dynamic Characteristics C Input Capacitance 341 pF iss V = 10 V, V = 0 V, DS GS C Output Capacitance f = 1.0 MHz 83 pF oss C Reverse Transfer Capacitance 43 pF rss t TurnOn Delay Time V = 10 V, I = 1 A, 8 16 ns d(on) DD D V = 4.5 V, R = 6 GS GEN t TurnOn Rise Time 10 20 ns r t TurnOff Delay Time 12 22 ns d(off) t TurnOff Fall Time 8 16 ns f Q Total Gate Charge V = 10V, I = 1.5 A, 3.8 5.4 nC g DS D V = 4.5 V GS Q GateSource Charge 0.8 nC gs Q GateDrain Charge 1.0 nC gd DrainSource Diode Characteristics and Maximum Ratings I Maximum Continuous DrainSource Diode Forward Current 0.42 A S V DrainSource Diode Forward 0.7 SD V = 0 V, I = 0.42 (Note 2) 1.2 V GS S Voltage Notes: 1. R is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of JA the drain pins. R is guaranteed by design while R is determined by the user s board design. JC CA b) 270C/W when mounted on a a) 250C/W when mounted on a 2 minimum pad. 0.02 in pad of 2 oz. copper. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% FDN308P Rev B(W)