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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.TM FDP12N50 / FDPF12N50T N-Channel UniFET MOSFET November 2013 FDP12N50 / FDPF12N50T TM N-Channel UniFET MOSFET 500 V, 11.5 A, 650 m Features Description TM R = 550 m (Typ.) V = 10 V, I = 6 A UniFET MOSFET is Fairchild Semiconductors high voltage DS(on) GS D MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 22 nC) This MOSFET is tailored to reduce on-state resistance, and to Low C (Typ. 11 pF) rss provide better switching performance and higher avalanche energy strength. This device family is suitable for switching 100% Avalanche Tested power converter applications such as power factor correction RoHS Compliant (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. Applications LCD/LED/PDP TV Lighting Uninterruptible Power Supply D G G D G S D TO-220F TO-220 S S o MOSFET Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FDP12N50 FDPF12N50T Unit V Drain to Source Voltage 500 V DSS V Gate to Source Voltage 30 V GSS o - Continuous (T = 25 C) 11.5 11.5 * C I Drain Current A D o - Continuous (T = 100 C) 6.9 6.9 * C I Drain Current - Pulsed (Note 1) 46 46 * A DM E Single Pulsed Avalanche Energy (Note 2) 456 mJ AS I Avalanche Current (Note 1) 11.5 A AR E Repetitive Avalanche Energy (Note 1) 16.7 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns o (T = 25 C) 165 42 W C P Power Dissipation D o o - Derate Above 25 C 1.33 0.3 W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG o T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds 300 C L *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDP12N50 FDPF12N50T Unit R Thermal Resistance, Junction to Case, Max. 0.75 3.0 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 62.5 62.5 JA 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDP12N50 / FDPF12N50T Rev. 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