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V = 10 V, I = 5.75 A UniFET II MOSFET is Fairchild Semiconductors high voltage DS(on) GS D MOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 23 nC ) technology. This advanced MOSFET family has the smallest Low C (Typ. 14 pF ) rss on-state resistance among the planar MOSFET, and also pro- vides superior switching performance and higher avalanche 100% Avalanche Tested energy strength. In addition, internal gate-source ESD diode ESD Improved Capability allows UniFET II MOSFET to withstand over 2kV HBM surge RoHS Compliant stress. This device family is suitable for switching power con- verter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp bal- Applications lasts. LCD/LED/PDP TV Lighting Uninterruptible Power Supply D G G D G S D TO-220 TO-220F S S o MOSFET Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FDP12N50NZ FDPF12N50NZ Unit V Drain to Source Voltage 500 V DSS V Gate to Source Voltage 25 V GSS o - Continuous (T = 25 C) 11.5 11.5* C I Drain Current A D o - Continuous (T = 100 C) 6.9 6.9* C I Drain Current - Pulsed (Note 1) 46 46* A DM E Single Pulsed Avalanche Energy (Note 2) 560 mJ AS I Avalanche Current (Note 1) 11.5 A AR E Repetitive Avalanche Energy (Note 1) 17 mJ AR MOSFET dv/dt Ruggedness 20 V/ns dv/dt Peak Diode Recovery dv/dt (Note 3) 10 V/ns o (T = 25 C) 170 42 W C P Power Dissipation D o o - Derate above 25 C 1.37 0.33 W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering, o T 300 C L 1/8 from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter Unit FDP12N50NZ FDPF12N50NZ R Thermal Resistance, Junction to Case, Max. 0.73 3.0 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 62.5 62.5 JA 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDP12N50NZ / FDPF12N50NZ Rev. 1.5