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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.TM FDP39N20 / FDPF39N20 N-Channel UniFET MOSFET August 2014 FDP39N20 / FDPF39N20 TM N-Channel UniFET MOSFET 200 V, 39 A, 66 m Features Description TM UniFET MOSFET is Fairchild Semiconductors high voltage R = 66 m (Max.) V = 10 V, I = 19.5 A DS(on) GS D MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 38 nC) This MOSFET is tailored to reduce on-state resistance, and to Low C (Typ. 57 pF) rss provide better switching performance and higher avalanche 100% Avalanche Tested energy strength. This device family is suitable for switching power converter applications such as power factor correction Applications (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. PDP TV Lighting Uninterruptible Power Supply AC-DC Power Supply D G G G G S D D S D TO-220 S TO-220F TO-220F (L-formed) S Absolute Maximum Ratings T = 25C unless otherwise noted. C FDPF39N20 / Symbol Parameter FDP39N20 FDPF39N20TLDTU Unit V Drain-Source Voltage 200 V DSS I Drain Current - Continuous (T = 25C) 39 39 * A D C - Continuous (T = 100C) 23.4 23.4 * A C (Note 1) I Drain Current - Pulsed 156 156 * A DM V Gate-Source voltage 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 860 mJ AS (Note 1) I Avalanche Current 39 A AR (Note 1) E Repetitive Avalanche Energy 25.1 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt 4.5 V/ns P Power Dissipation (T = 25C) 251 37 W D C - Derate Above 25C 2.0 0.29 W/C T T Operating and Storage Temperature Range -55 to +150 C J, STG T Maximum Lead Temperature for Soldering, L 300 C 1/8 from Case for 5 Seconds * Drain current limited by maximum junction temperature. Thermal Characteristics FDPF39N20 / Symbol Parameter FDP39N20 FDPF39N20TLDTU Unit R Thermal Resistance, Junction-to-Case, Max. 0.5 3.4 JC C/W R Thermal Resistance, Junction-to-Ambient, Max. 62.5 62.5 JA 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDP39N20 / FDPF39N20 Rev. C2