X-On Electronics has gained recognition as a prominent supplier of FDP8874 MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDP8874 MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FDP8874 ON Semiconductor

FDP8874 electronic component of ON Semiconductor
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See Product Specifications
Part No.FDP8874
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET 30V 114A 5.3 OHM N-CH
Datasheet: FDP8874 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 3.416
10 : USD 2.9633
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Obsolete
0
MOQ : 413
Multiples : 413
413 : USD 0.9877
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Obsolete
0

Multiples : 800
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Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 3.9609
10 : USD 1.4936
25 : USD 1.3637
100 : USD 1.1832
500 : USD 0.9997
800 : USD 0.8473
2400 : USD 0.8212
N/A

Obsolete
0
MOQ : 13
Multiples : 13
13 : USD 0.8182
100 : USD 0.6697
250 : USD 0.6425
500 : USD 0.6353
1000 : USD 0.6109
2500 : USD 0.5986
N/A

Obsolete
0
MOQ : 800
Multiples : 800
800 : USD 0.8081
830 : USD 0.7603
N/A

Obsolete
0
MOQ : 50
Multiples : 50
50 : USD 0.7352
420 : USD 0.6916
N/A

Obsolete
   
Manufacturer
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RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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We are delighted to provide the FDP8874 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDP8874 and other electronic components in the MOSFETs category and beyond.

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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDP8874 FDP8874 N-Channel PowerTrench MOSFET Features 30V, 114A, 5.3m r = 5.3m , V = 10V, I = 40A DS(ON) GS D General Description r = 6.6m , V = 4.5V, I = 40A DS(ON) GS D This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using High performance trench technology for extremely low either synchronous or conventional switching PWM r DS(ON) controllers. It has been optimized for low gate charge, low r and fast switching speed. DS(ON) Low gate charge Applications High power and current handling capability DC/DC converters RoHS Compliant (FLANGE) D DRAIN SOURCE DRAIN G GATE S TO-220AB FDP SERIES MOSFET Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DSS V Gate to Source Voltage 20 V GS Drain Current o 114 A Continuous (T = 25 C, V = 10V) (Note 1) C GS o I Continuous (T = 25 C, V = 4.5V) (Note 1) 102 A D C GS o o Continuous (T = 25 C, V = 10V, with R = 62 C/W) 16 A amb GS JA Pulsed Figure 4 A E Single Pulse Avalanche Energy (Note 2) 105 mJ AS Power dissipation 110 W P D o o Derate above 25C0.73W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case TO-220 1.36 C/W JC o R Thermal Resistance Junction to Ambient TO-220 ( Note 3) 62 C/W JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDP8874 FDP8874 TO-220AB Tube N/A 50 units 2008 Semiconductor Components Industries, LLC. Publication Order Number: September-2017, Rev. 1 FDP8874/D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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