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V = 10 V, I = 40 A This N-Channel MOSFET is produced using Fairchild Semicon- DS(on) GS D ductors advanced PowerTrench process that has been tai- Fast Switching Speed lored to minimize the on-state resistance while maintaining Low Gate Charge, Q = 31 nC (Typ.) G superior switching performance. High Performance Trench Technology for Extremely Low Applications R DS(on) Consumer Appliances High Power and Current Handling Capability LED TV RoHS Compliant Synchronous Rectification for ATX / Sever / Telecom PSU Motor Drives and Uninterruptible Power Supplies Micro Solar Inverter D G G D S TO-220F S o Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FDPF085N10A Unit V Drain to Source Voltage 100 V DSS V Gate to Source Voltage 20 V GSS o - Continuous (T = 25 C) 40 C I Drain Current A D o - Continuous (T = 100 C) 28 C I Drain Current - Pulsed (Note 1) 160 A DM E Single Pulsed Avalanche Energy (Note 2) 269 mJ AS dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns o (T = 25 C) 33.3 W C P Power Dissipation D o o - Derate Above 25C0.22W/ C o T , T Operating and Storage Temperature Range -55 to +175 C J STG o Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds T 300 C L Thermal Characteristics Symbol Parameter FDPF085N10A Unit R Thermal Resistance, Junction to Case, Max. 4.5 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 62.5 JA 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDPF085N10A Rev. C1