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V = 10 V, I = 10 A UniFET MOSFET is Fairchild Semiconductor s high voltage DS(on) GS D MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 50 nC) This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche Low C (Typ. 27 pF) rss energy strength. The body diodes reverse recovery performance 100% Avalanche Aested of UniFET FRFET MOSFET has been enhanced by lifetime control. Its t is less than 100nsec and the reverse dv/dt immu- rr Improve dv/dt Capability nity is 15V/ns while normal planar MOSFETs have over 200nsec RoHS Compliant and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFETs body diode is significant. Applications This device family is suitable for switching power converter appli- LCD/LED/PDP TV cations such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. Lighting Uninterruptible Power Supply AC-DC Power Supply D G G G D TO-220 D TO-220F S S S o MOSFET Maximum Ratings T = 25 C unless otherwise noted C Symbol Parameter FDP20N50F FDPF20N50FT Unit V Drain to Source Voltage 500 V DSS V Gate to Source Voltage 30 V GSS o - Continuous (T = 25 C) 20 20* C I Drain Current A D o - Continuous (T = 100 C) 12.9 12.9* C I Drain Current - Pulsed (Note 1) 80 80* A DM E Single Pulsed Avalanche Energy (Note 2) 1110 mJ AS I Avalanche Current (Note 1) 20 A AR E Repetitive Avalanche Energy (Note 1) 25 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns o (T = 25 C) 250 38.5 W C P Power Dissipation D o o - Derate above 25C2.00.3W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8 from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDP20N50F FDPF20N50FT Unit R Thermal Resistance, Junction to Case, Max. 0.5 3.3 JC o R Thermal Resistance, Case to Sink, Typ. 0.5 - C/W CS R Thermal Resistance, Junction to Ambient, Max. 62.5 62.5 JA 2011 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDP20N50F/ FDPF20N50FT Rev. 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