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V = 10 V, I = 15 A This N-Channel MOSFET is produced using Fairchild DS(on) GS D Semiconductors advanced PowerTrench process that has Fast Switching Speed been tailored to minimize the on-state resistance while maintain-ing superior switching performance. Low Gate Charge, Q = 14.3 nC (Typ.) G High Performance Trench Tenchology for Extremely Low Applications R DS(on) Consumer Appliances High Power and Current Handling Capability LEDTV RoHSCompliant Synchronous Rectification Uninterruptible Power Supply Motor Solar Inverter D G G D S TO-220F S Absolute Maximum Ratings TC = 25C unless otherwise noted. Symbol Parameter FDPF390N15A Unit V Drain to Source Voltage 150 V DSS V Gate to Source Voltage 20 V GSS o - Continuous (T = 25 C,Silicon Limited) 15 C I Drain Current A D o - Continuous (T = 100 C,Silicon Limited) 10 C I Drain Current - Pulsed (Note 1) 60 A DM E Single Pulsed Avalanche Energy (Note 2) 78 mJ AS dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns o (T = 25 C) 22 W C P Power Dissipation D o o - Derate above 25C0.18W/ C o T , T Operating and Storage Temperature Range -55 to +175 C J STG o T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds . 300 C L Thermal Characteristics Symbol Parameter Unit FDPF390N15A R Thermal Resistance, Junction to Case, Max. 5.7 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 62.5 JA www.fairchildsemi.com 2011 Fairchild Semiconductor Corporation 1 FDPF390N15A Rev C1