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V = 10 V, I = 2.1 A DS(on) GS D MOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 9 nC) technology. This advanced MOSFET family has the smallest Low C (Typ. 4 pF) on-state resistance among the planar MOSFET, and also pro- rss vides superior switching performance and higher avalanche 100% Avalanche Tested energy strength. In addition, internal gate-source ESD diode Improved dv/dt Capability allows UniFET II MOSFET to withstand over 2kV HBM surge stress. The body diodes reverse recovery performance of ESD Improved Capability UniFET II FRFET MOSFET has been enhanced by lifetime RoHS Compliant control. Its t is less than 100nsec and the reverse dv/dt immu- rr nity is 15V/ns while normal planar MOSFETs have over Applications 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain LCD/LED TV applications in which the performance of MOSFETs body diode Lighting is significant. This device family is suitable for switching power Uninterruptible Power Supply converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp bal- AC-DC Power Supply lasts. D G G D S TO-220F o S MOSFET Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FDPF5N50NZF Unit V Drain to Source Voltage 500 V DSS V Gate to Source Voltage 25 V GSS o - Continuous (T = 25 C) 4.2* C I Drain Current A D o - Continuous (T = 100 C) 2.5* C I Drain Current - Pulsed (Note 1) 16* A DM E Single Pulsed Avalanche Energy (Note 2) 165 mJ AS I Avalanche Current (Note 1) 4.2 A AR E Repetitive Avalanche Energy (Note 1) 7.8 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns o (T = 25 C) 30 W C P Power Dissipation D o o - Derate above 25C0.24 W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8 from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter Unit FDPF5N50NZF R Thermal Resistance, Junction to Case, Max. 4.1 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 62.5 JA 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDPF5N50NZF Rev. C1