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This literature is subject to all applicable copyright laws and is not for resale in any manner.FDS3992 April 2013 FDS3992 Dual N-Channel PowerTrench MOSFET 100V, 4.5A, 62m Features Applications r = 54m (Typ.), V = 10V, I = 4.5A DC/DC converters and Off-Line UPS DS(ON) GS D Q (tot) = 11nC (Typ.), V = 10V g GS Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low Q Body Diode RR High Voltage Synchronous Rectifier Optimized efficiency at high frequencies Direct Injection / Diesel Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) 42V Automotive Load Control Formerly developmental type 82745 Electronic Valve Train Systems (1) (8) Branding Dash (2) (7) 5 1 (3) (6) 2 (4) (5) 3 4 SO-8 MOSFET Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 100 V DSS V Gate to Source Voltage 20 V GS Drain Current o o 4.5 A Continuous (T = 25 C, V = 10V, R = 50 C/W) A GS JA I D o o Continuous (T = 100 C, V = 10V, R = 50 C/W) 2.8 A A GS JA Pulsed Figure 4 A E Single Pulse Avalanche Energy (Note 1) 167 mJ AS Total Package Power Dissipation 2.5 W P D o o Derate above 25 C 20 mW/ C o T , T Operating and Storage Temperature -55 to 150 C J STG Thermal Characteristics o R Thermal Resistance, Junction to Ambient at 10 seconds (Note 3) 50 C/W JA o R Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3) 85 C/W JA o R Thermal Resistance, Junction to Case (Note 2) 25 C/W JC Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDS3992 FDS3992 SO-8 13 12mm 2500 units 2004 Fairchild Semiconductor Corporation FDS3992 Rev. 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