MOSFET P-Channel, Logic Level, POWERTRENCH FDS4435A General Description This P Channel Logic Level MOSFET is produced using www.onsemi.com ON Semiconductors advanced POWERTRENCH process that has been especially tailored to minimize the onstate resistance and yet D maintain low gate charge superior switching performance. D These devices are well suited for notebook computer applications: D D load switching and power management, battery charging circuits, and DC/DC conversion. G S S Features S 9 A, 30 V. R = 0.017 V = 10 V DS(ON) GS SOIC8 R = 0.025 V = 4.5 V DS(ON) GS CASE 751EB Low Gate Charge (21 nC Typical). High Performance Trench Technology for Extremely Low R MARKING DIAGRAM DS(ON) High Power and Current Handling Capability This Device is PbFree and RoHS Compliant FDS4435A ALYW ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A Symbol Parameter Ratings Unit FDS4435A = Specific Device Code A = Assembly Site V DrainSource Voltage 30 V DS L = Wafer Lot Number V GateSource Voltage 20 V GSS YW = Assembly Start Week I Drain Current Continuous (Note 1a) 9 A D Pulsed 50 ELECTRICAL CONNECTION P Power Dissipation (Note 1a) 2.5 W D for Single Operation (Note 1b) 1.2 54 (Note 1c) 1 T , T Operating and Storage Junction 55 to +150 C J STG 63 Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the 72 device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 81 THERMAL CHARACTERISTICS Symbol Parameter Ratings Unit ORDERING INFORMATION See detailed ordering and shipping information on page 5 of R Thermal Resistance, Junction to 50 C/W JA this data sheet. Ambient (Note 1a) R Thermal Resistance, Junction to 25 C/W JC Case (Note 1) Semiconductor Components Industries, LLC, 2001 1 Publication Order Number: December, 2019 Rev. 5 FDS4435A/DFDS4435A ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Symbol Parameter Test Condition Min Typ Max Unit OFF CHARACTERISTICS BV DrainSource Breakdown Voltage V = 0 V, I = 250 A 30 V DSS GS D BV Breakdown Voltage Temperature Coefficient I = 250 A, Referenced to 25C 26 mV/C D DSS T J I Zero Gate Voltage Drain Current V = 24 V, V = 0 V 1 A DSS DS GS T = 125C 10 J I GateBody Leakage Current, Forward V = 20 V, V = 0 V 100 nA GSSF GS DS I GateBody Leakage Current, Reverse V = 20 V, V = 0 V 100 nA GSSR GS DS ON CHARACTERISTICS V Gate Threshold Voltage V = V , I = 250 A 1 1.7 2 V GS(th) DS GS D Gate Threshold Voltage Temperature Coefficient I = 250 A, Referenced to 25C 4.2 mV/C V D GS(th) T J R Static DrainSource OnResistance V = 10 V, I = 9 A 0.015 0.017 DS(on) GS D T = 125C 0.021 0.030 J V = 4.5 V, I = 7 A 0.023 0.025 GS D g Forward Transconductance V = 10 V, I = 9 A 25 S FS DS D DYNAMIC CHARACTERISTICS C Input Capacitance V = 15 V, V = 0 V 2010 pF iss DS GS f = 1.0 MHz C Output Capacitance 590 pF oss C Reverse Transfer Capacitance 260 pF rss SWITCHING CHARACTERISTICS t TurnOn Delay Time V = 15 V, I = 1 A 12 22 ns d(on) DD D V = 10 V, R = 6 GS GEN t TurnOn Rise Time 15 27 ns r t TurnOff Delay Time 100 140 ns d(off) t TurnOff Fall Time 55 80 ns f Q Total Gate Charge V = 15 V, I = 9 A 21 30 nC g DS D V = 5 V GS Q GateSource Charge 6 nC gs Q GateDrain Charge 8 nC gd DRAINSOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS I Maximum Continuous DrainSource Diode Forward Current 2.1 A S V DrainSource Diode Forward Voltage V = 0 V, I = 2.1 A (Note 2) 0.75 1.2 V SD GS S t SourceDrain Reverse Recovery Time I = 10 A, dl /dt = 100 A/ S 36 80 ns rr F F Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. R is the sum of the junctiontocase and casetoambient resistance where the case thermal reference is defined as the solder mounting JA surface of the drain pins. R is guaranteed by design while R is determined by the users board design. JC CA a) 50C/W when b) 105C/W when c) 125C/W when 2 2 mounted on a 1 in mounted on a 0.04 in mounted on a minimum pad of 2 oz. Copper. pad of 2 oz. copper. pad. 2. Pulse Test Pulse Width 300 s, Duty Cycle 2.0% www.onsemi.com 2