FDS4435BZ MOSFET P-Channel, POWERTRENCH -30 V, -8.8 A, 20 m Description www.onsemi.com This PChannel MOSFET is produced using ON Semiconductors advanced POWERTRENCH process that has been especially tailored D D to minimize the onstate resistance. D D This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable G Battery Packs. S S S Pin 1 Features SOIC8 Max R = 20 m at V = 10 V, I = 8.8 A CASE 751EB DS(on) GS D Max R = 35 m at V = 4.5 V, I = 6.7 A DS(on) GS D ELECTRICAL CONNECTION Extended V Range (25 V) for Battery Applications GSS HBM ESD Protection Level of 3.8 kV Typical (Note 3) High Performance Trench Technology for Extremely Low R D54 G DS(on) High Power and Current Handling Capability D63 S This Device is PbFree and RoHS Compliant D72 S Specifications D81 S MAXIMUM RATINGS (T = 25C unless otherwise noted) A Symbol Parameter Ratings Unit V Drain to Source Voltage 30 V MARKING DIAGRAM DS V Gate to Source Voltage 25 V GS I A Drain Current D FDS4435BZ Continuous T = 25C (Note 1a) 8.8 A ALYW Pulsed 50 P W D Power Dissipation T = 25C (Note 1a) 2.5 A Power Dissipation T = 25C (Note 1b) 1.0 A E Single Pulse Avalanche Energy 24 mJ FDS4435BZ = Specific Device Code AS (Note 4) A = Assembly Site L = Wafer Lot Number T , T Operating and Storage Junction Tem- 55 to +150 C J STG YW = Assembly Start Week perature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. Device Package Shipping FDS4435BZ SOIC8 2,500 / THERMAL CHARACTERISTICS (PbFree) Tape & Reel Symbol Parameter Ratings Unit For information on tape and reel specifications, R Thermal Resistance, Junction to Case 25 C/W JC including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification R Thermal Resistance, Junction to 50 JA Brochure, BRD8011/D. Ambient (Note 1a) Semiconductor Components Industries, LLC, 2009 1 Publication Order Number: August, 2019 Rev. 4 FDS4435BZ/DFDS4435BZ Table 1. ELECTRICAL CHARACTERISTICS (T = 25C) A Symbol Parameter Conditions Min Typ Max Unit OFF CHARACTERISTICS I = 250 A, V = 0 V BV Drain to Source Breakdown Voltage 30 V DSS D GS 21 mV/C BV / Breakdown Voltage Temperature I = 250 A, referenced to 25C D DSS Coefficient T J I A Zero Gate Voltage Drain Current V = 24 V, V = 0 V 1 DSS DS GS I Gate to Source Leakage Current V = 25 V, V = 0 V 10 A GSS GS DS ON CHARACTERISTICS V Gate to Source Threshold Voltage V = V , I = 250 A 1 2.1 3 V GS DS D GS(th) V / Gate to Source Threshold Voltage I = 250 A, referenced to 25C 6 mV/C GS(th) D T Temperature Coefficient J Static Drain to Source On Resistance R m V = 10 V, I = 8.8 A 16 20 DS(on) GS D V = 4.5 V, I = 6.7 A 26 35 GS D V = 10 V, I = 8.8 A, T = 125C 22 28 GS D J g Forward Transconductance V = 5V, I = 8.8 A 24 S FS DS D DYNAMIC CHARACTERISTICS V = 15 V, V = 0 V, f = 1MHz C Input Capacitance 1385 1845 pF DS GS iss C Output Capacitance 275 365 pF oss C Reverse Transfer Capacitance 230 345 pF rss R Gate Resistance f = 1MHz 4.5 g SWITCHING CHARACTERISTICS V = 15 V, I = 8.8 A, V = 10 t TurnOn Delay Time DD D GS 10 20 ns d(on) V, R = 6 GEN t Rise Time 6 12 ns r t TurnOff Delay Time 30 48 ns d(off) t Fall Time 12 22 ns f Q Total Gate Charge V = 0 V to 10 V, V = 15 V, 28 40 nC g GS DD I = 8.8 A D Q Total Gate Charge V = 0 V to 5 V, V = 15 V, 16 23 nC g GS DD I = 8.8 A D V = 15 V, I = 8.8 A Q Gate to Source Charge DD D 5.2 nC gs Q Gate to Drain Miller Charge 7.4 nC gd DRAINSOURCE DIODE CHARACTERISTICS V Source to Drain Diode Forward Voltage V = 0V, I = 8.8A (Note 2) 0.9 1.2 V SD GS S I = 8.8 A, di/dt = 100 A/ s t Reverse Recovery Time F 29 44 ns rr Q Reverse Recovery Charge 23 35 nC rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. NOTES: 2 1. R is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 1.5 in. board of FR4 material. R is guaranteed JA JC by design while R is determined by the users board design. CA a. 50C/W when mounted on b. 125C/W when mounted on 2 a 1 in pad of 2 oz copper. a minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. 4. Starting T = 25C, L = 1 mH, I = 7 A, V = 30 V, V = 10 V. J AS DD GS www.onsemi.com 2