X-On Electronics has gained recognition as a prominent supplier of FDS6910 MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDS6910 MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FDS6910 ON Semiconductor

FDS6910 electronic component of ON Semiconductor
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Part No.FDS6910
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET Dual N-Ch LogicLevel PowerTrench MOSFET
Datasheet: FDS6910 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 0.457 ea
Line Total: USD 1142.5 
Availability - 0
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 0.6001
5000 : USD 0.5581
10000 : USD 0.5512
15000 : USD 0.5457
20000 : USD 0.5402
25000 : USD 0.5348
30000 : USD 0.5295
40000 : USD 0.5242
50000 : USD 0.5189

0
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 0.457
5000 : USD 0.457
7500 : USD 0.457
10000 : USD 0.457

0
Ship by Wed. 27 Nov to Tue. 03 Dec

Multiples : 0

0
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ : 1
Multiples : 1
1 : USD 1.4625
10 : USD 1.1988
100 : USD 0.9051
500 : USD 0.7711

0
Ship by Mon. 25 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 3.6246
10 : USD 1.3592
100 : USD 1.0159
500 : USD 0.8399
1000 : USD 0.6628
2500 : USD 0.6421

0
Ship by Mon. 25 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 1.4247
5 : USD 1.1669
19 : USD 0.8548
51 : USD 0.8006

0
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 0.7841

   
Manufacturer
Product Category
RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Maximum Operating Temperature
Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FDS6910 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDS6910 and other electronic components in the MOSFETs category and beyond.

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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDS6910 FDS6910 Dual N-Channel Logic Level PowerTrench MOSFET Features General Description 7.5 A, 30 V. R = 13 m V = 10 V DS(ON) GS R = 17 m V = 4.5 V DS(ON) GS These N-Channel Logic Level MOSFETs are produced using ON Semiconductors advanced Fast switching speed PowerTrench process that has been especially tailored Low gate charge to minimize the on-state resistance and yet maintain superior switching performance. High performance trench technology for extremely These devices are well suited for low voltage and low R DS(ON) battery powered applications where low in-line power loss and fast switching are required. High power and current handling capability D1 D 5 4 D1 D D2 D Q1 6 3 D2 D 7 2 G1 SO-8 Q2 G S1 8 1 S G2 S S2 SO-8 S Pin 1 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage 20 V GSS ID Drain Current Continuous (Note 1a) 7.5 A Pulsed 20 P W D Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1.0 (Note 1c) 0.9 T , T Operating and Storage Junction Temperature Range 55 to +150 J STG C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 78 R C/W JA Thermal Resistance, Junction-to-Case (Note 1) 40 R C/W JC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6910 FDS6910 13 12mm 2500 units Publication Order Number: 2004 Semiconductor Components Industries, LLC. FDS6910/D September-2017, Rev. 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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