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This literature is subject to all applicable copyright laws and is not for resale in any manner.FDS6984AS J May 2008 FDS6984AS Dual Notebook Power Supply N-Channel PowerTrench SyncFET General Description Features The FDS6984AS is designed to replace two single Q2: Optimized to minimize conduction losses SO-8 MOSFETs and Schottky diode in synchronous Includes SyncFET Schottky diode DC:DC power supplies that provide various peripheral 8.5A, 30V R max= 20 m V = 10V DS(on) GS voltages for notebook computers and other battery powered electronic devices. FDS6984AS contains two R max= 28 m V = 4.5V DS(on) GS unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion Q1: Optimized for low switching losses efficiency. Low gate charge (8nC typical) The high-side switch (Q1) is designed with specific 5.5A, 30V R max= 31 m V = 10V DS(on) GS emphasis on reducing switching losses while the low- R max= 40 m V = 4.5V side switch (Q2) is optimized to reduce conduction DS(on) GS losses. Q2 also includes a patented combination of a MOSFET monolithically integrated with a Schottky RoHS Compliant diode. D1 5 4 D1 D2 Q1 6 3 D2 7 2 Q2 G1 8 1 S1 SO-8 G2 S2 Absolute Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter Q2 Q1 Units V Drain-Source Voltage 30 30 V DSS V Gate-Source Voltage 20 20 V GSS I Drain Current - Continuous (Note 1a) 8.5 5.5 A D - Pulsed 30 20 P Power Dissipation for Dual Operation 2 W D Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 T , T Operating and Storage Junction Temperature Range 55 to +150 J STG C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 78 R C/W JA Thermal Resistance, Junction-to-Case (Note 1) 40 R C/W JC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6984AS FDS6984AS 13 12mm 2500 units FDS6984AS Rev A1(X) 2008 Fairchild Semiconductor Corporation