ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDS6986AS D2/S1 D2/S1 D1 D1 G2 S2 G1 S1/D2 FDS6986AS Dual Notebook Power Supply N-Channel PowerTrench SyncFET General Description Features The FDS6986AS is designed to replace two single SO- 8 MOSFETs and Schottky diode in synchronous Q2: Optimized to minimize conduction losses DC:DC power supplies that provide various peripheral Includes SyncFET Schottky body diode voltages for notebook computers and other battery powered electronic devices. FDS6986AS contains two 7.9A, 30V R = 20 m V = 10V DS(on) GS unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion R = 28 m V = 4.5V DS(on) GS efficiency. Q1: Optimized for low switching losses The high-side switch (Q1) is designed with specific Low gate charge (10 nC typical) emphasis on reducing switching losses while the low- 6.5A, 30V R = 29 m V = 10V DS(on) GS side switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode R = 38 m V = 4.5V DS(on) GS using ON Semiconductors monolithic SyncFET technology. Q2 5 4 D D D 6 3 D Q1 7 2 SO-8 G 8 1 S S Pin 1 SO-8 S Absolute Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter Q2 Q1 Units V Drain-Source Voltage 30 30 V DSS V Gate-Source Voltage V GSS 20 16 I Drain Current - Continuous (Note 1a) 7.9 6.5 A D - Pulsed 30 20 P Power Dissipation for Dual Operation 2 W D Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 T , T Operating and Storage Junction Temperature Range 55 to +150 J STG C Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 78 C/W JA Thermal Resistance, Junction-to-Case (Note 1) 40 R C/W JC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6986AS FDS6986AS 13 12mm 2500 units FDS6986AS FDS6986AS- NL (Note 4) 13 12mm 2500 units 2005 Semiconductor Components Industries, LLC. Publication Order Number: September-2017, Rev. 1 FDS6986AS/D