FDS6994S October 2006 FDS6994S Dual Notebook Power Supply N-Channel PowerTrench SyncFet General Description Features The FDS6994S is designed to replace two single SO-8 Q2: Optimized to minimize conduction losses MOSFETs and Schottky diode in synchronous DC:DC Includes SyncFET Schottky body diode power supplies that provide various peripheral voltages 8.2A, 30V R = 15 m V = 10V DS(on) GS for notebook computers and other battery powered electronic devices. FDS6994S contains two unique R = 17.5 m V = 4.5V DS(on) GS 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. Q1: Optimized for low switching losses Low gate charge (85.5 nC typical) The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low- 6.9A, 30V R = 21 m V = 10V DS(on) GS side switch (Q2) is optimized to reduce conduction R = 26 m V = 4.5V losses. Q2 also includes an integrated Schottky diode DS(on) GS using Fairchilds monolithic SyncFET technology. D1 5 4 D1 D2 Q1 6 3 D2 7 2 Q2 G1 8 1 S1 SO-8 G2 S2 Absolute Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter Q2 Q1 Units V Drain-Source Voltage 30 30 V DSS V Gate-Source Voltage 16 16 V GSS I Drain Current - Continuous (Note 1a) 8.2 6.9 A D - Pulsed 30 20 P Power Dissipation for Dual Operation 2 W D Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 T , T Operating and Storage Junction Temperature Range -55 to +150 J STG C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 78 R C/W JA Thermal Resistance, Junction-to-Case (Note 1) 40 R C/W JC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6994S FDS6994S 13 12mm 2500 units FDS6994S Rev C2(W) 2006 Fairchild Semiconductor Corporation FDS6994S Electrical Characteristics T = 25C unless otherwise noted A Symbol Parameter Test Conditions Type Min Typ Max Units Off Characteristics BV Drain-Source Breakdown V = 0 V, I = 1 mA Q2 30 V DSS GS D Voltage V = 0 V, I = 250 uA Q1 30 GS D BVDSS Breakdown Voltage I = 1 mA, Referenced to 25C Q2 23 D mV/C Temperature Coefficient Q1 24 T I = 250 A, Referenced to 25C J D I Zero Gate Voltage Drain V = 24 V, V = 0 V Q2 500 DSS DS GS A Current Q1 1 I Gate-Body Leakage V = 16 V, V = 0 V All 100 GSS GS DS nA On Characteristics (Note 2) V Gate Threshold Voltage V = V , I = 1 mA Q2 1 1.5 3 GS(th) DS GS D V V = V , I = 250 A Q1 1 1.9 3 DS GS D VGS(th) Gate Threshold Voltage ID = 1 mA, Referenced to 25C Q2 2 mV/C Temperature Coefficient T I = 250 uA, Referenced to 25C Q1 5 J D Static Drain-Source V = 10 V, I = 8.2A Q2 10 15 RDS(on) GS D On-Resistance 15 24 VGS = 10 V, ID = 8.2 A, TJ = 125C 11 17.5 V = 4.5 V, I = 7.6 A m GS D V = 10 V, I = 6.9 A Q1 16 21 GS D V = 10 V, I = 6.9 A, T = 125C 24 33.5 GS D J 19 26 V = 4.5 V, I = 6.2 A GS D I On-State Drain Current V = 10 V, V = 5 V Q2 30 D(on) GS DS A Q1 20 g Forward Transconductance V = 10 V, I = 8.2 A Q2 42 FS DS D S V = 10 V, I = 6.9 A Q1 41 DS D Dynamic Characteristics C Input Capacitance V = 15 V, V = 0 V, Q2 2815 pF iss DS GS f = 1.0 MHz Q1 800 C Output Capacitance Q2 540 pF oss Q1 205 C Reverse Transfer Capacitance Q2 210 pF rss Q1 90 R Gate Resistance V = 15 mV, f = 1.0 MHz Q2 2.844444.9 G GS Q1 2.6 4.6 FDS6994S Rev C2(W)