X-On Electronics has gained recognition as a prominent supplier of FDS8817NZ MOSFET across the USA, India, Europe, Australia, and various other global locations. FDS8817NZ MOSFET are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

FDS8817NZ ON Semiconductor

FDS8817NZ electronic component of ON Semiconductor
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See Product Specifications
Part No.FDS8817NZ
Manufacturer: ON Semiconductor
Category: MOSFET
Description: MOSFET 30V N-Ch PowerTrench MOSFET
Datasheet: FDS8817NZ Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Obsolete
Availability Price Quantity
0
MOQ : 2500
Multiples : 2500
2500 : USD 0.5285
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MOQ : 1
Multiples : 1
1 : USD 0.9955
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0
MOQ : 59
Multiples : 1
59 : USD 0.592
75 : USD 0.57
250 : USD 0.57
1250 : USD 0.5481
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MOQ : 849
Multiples : 849
849 : USD 0.5116
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Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.874
10 : USD 0.7371
30 : USD 0.6696
100 : USD 0.6021
500 : USD 0.5608
1000 : USD 0.5403
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Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 2.5109
10 : USD 0.9427
100 : USD 0.7063
500 : USD 0.5834
1000 : USD 0.4605
2500 : USD 0.4456
5000 : USD 0.4317
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Obsolete
0
MOQ : 2500
Multiples : 2500
2500 : USD 0.5973
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Obsolete
0
MOQ : 104
Multiples : 1
104 : USD 1.1128
250 : USD 1.1065
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Obsolete
0
MOQ : 82
Multiples : 1
82 : USD 1.042
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Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
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Technology
Number of Channels
Vgs - Gate-Source Voltage
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Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
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Cnhts
Hts Code
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Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FDS8817NZ from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDS8817NZ and other electronic components in the MOSFET category and beyond.

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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDS8817NZ N-Channel PowerTrench MOSFET FDS8817NZ N-Channel PowerTrench MOSFET 30V, 15A, 7.0m Features General Description Max r = 7m at V = 10V, I = 15A DS(on) GS D This N-Channel MOSFET is produced using ON Max r = 10m at V = 4.5V, I =12.6A Semiconductors advanced PowerTrench process that has DS(on) GS D been especially tailored to minimize the on-state resistance. HBM ESD protection level of 3.8KV typical (note 3) This device is well suited for Power Management and load High performance trench technology for extremely low r DS(on) switching applications common in Notebook Computers and High power and current handling capability Portable Battery Packs. RoHS compliant D D G D D D D S G D S SO-8 S S S D S Pin 1 MOSFET Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous (Note 1a) 15 I A D -Pulsed 60 E Single Pulse Avalanche Energy (Note 4) 181 mJ AS Power Dissipation (Note 1a) 2.5 P W D Power Dissipation (Note 1b) 1.0 T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case (Note 1) 25 JC R Thermal Resistance, Junction to Ambient (Note 1a) 50 C/W JA R Thermal Resistance, Junction to Ambient (Note 1b) 125 JA Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDS8817NZ FDS8817NZ 13 12mm 2500 units 1 2008 Semiconductor Components Industries, LLC. Publication Order Number: October-2017, Rev.3 FDS8817NZ/D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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