MOSFET, N-Channel, POWERTRENCH 40 V, 18.6 A, 4.5 m FDS8840NZ General Description www.onsemi.com The FDS8840NZ has been designed to minimize losses in power conversion application. Advancements in both silicon and package D technologies have been combined to offer the lowest r while DS(on) D maintaining excellent switching performance. D D Features G S Max r = 4.5 m at V = 10 V, I = 18.6 A DS(on) GS D S Pin 1 S Max r = 6.0 m at V = 4.5 V, I = 14.9 A DS(on) GS D SOIC8 HBM ESD Protection Level of 6 kV Typical (Note 3) CASE 751EB High Performance Trench Technology for Extremely Low r DS(on) and Fast Switching PIN ASSIGNMENT High Power and Current Handling Capability These Devices are PbFree, Halogen Free/BFR Free and are RoHS D G Compliant D S Applications D S Synchronous Buck for Vcore and Server D S Notebook Battery Pack Load Switch MARKING DIAGRAM 8 Y&Z&2&K FDS 8840NZ 1 Y = ON Semiconductor Logo &Z = Assembly Plant Code &2 = Numeric Date Code &K = Lot Code FDS8840NZ = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: October, 2019 Rev. 0 FDS8840NZ/DFDS8840NZ ORDERING INFORMATION Part Number Device Marking Package Shipping FDS8840NZ FDS8840NZ SOIC8 2500 Units / Tape & Reel (Pb-Free / Halogen Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A Symbol Parameter Value Unit V Drain to Source Voltage 40 V DS V Gate to Source Voltage 20 V GS I A Drain Current Continuous 18.6 D Drain Current Pulsed 63 E Single Pulse Avalanche Energy (Note 4) 600 mJ AS P Power Dissipation, T = 25C (Note 1a) 2.5 W D A Power Dissipation, T = 25C (Note 1b) 1.0 A T , T Operating and Storage Junction Temperature Range 55 to 150 C J STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case (Note 1) 25 C/W JC Thermal Resistance, Junction to Ambient (Note 1a) 50 C/W R JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Test Conditions Symbol Parameter Min Typ Max Unit Off Characteristics BV Drain to Source Breakdown Voltage I = 250 A, V = 0 V 40 V DSS D GS BV I = 250 A, referenced to 25C Breakdown Voltage Temperature Coefficient 31 mV/C DSS D T J V = 32 V, V = 0 V I Zero Gate Voltage Drain Current 1 A DSS DS GS V = 20 V, V = 0 V I Gate to Source Leakage Current 10 A GS DS GSS On Characteristics V = V , I = 250 A VGS(th) Gate to Source Threshold Voltage 1.0 1.8 3.0 V GS DS D VGS(th) Gate to Source Threshold Voltage Temperature I = 250 A, referenced to 25C 6 mV/C D T J Coefficient r Static Drain to Source On Resistance m V = 10 V, I = 18.6 A 3.9 4.5 DS(on) GS D V = 4.5 V, I = 14.9 A 4.6 6.0 GS D V = 10 V, I = 18.6 A, T = 125C 5.9 7.0 GS D J g Forward Transconductance V = 5 V, I = 18.6 A 83 S DS D FS Dynamic Characteristics Input Capacitance 5665 7535 pF Ciss V = 20 V, V = 0 V, f = 1 MHz DS GS Coss Output Capacitance 650 865 pF Crss Reverse Transfer Capacitance 445 670 pF R Gate Resistance 1.2 g www.onsemi.com 2