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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. June 2009 N N -Channel V, 0.22 A continuous, 0.5 A Peak. This N hannel logic level enhancement mode field effect R = 5 V V transistor is produced using Fairchild s proprietary, high cell density, DMOS technology. This very high density process is R = 4 V V . especially tailored to minimize on-state resistance. This direct device has been designed especially for low voltage operation in 3V circuits. V < 1.06V. applications as a replacement for digital transistors. Since GS(th) bias resistors are not required, this one N-channel FET can . replace several different digital transistors, w ith different bias resistor values. Replace multiple NPN digital transistors with one DMOS FET. T M T M Mark:301 INVERTER APPLICATION Vcc D D OUT IN G S GND G S o T A F N V V V 8 V I I A D P W D T J 6 R 2009 Fairchild Semiconductor Corporation FDV301N Rev.F 1 JA C/W 357 Thermal Resistance, Junction-to-Ambient THERMAL CHARACTERISTICS Human Body Model (100pf / 1500 Ohm) kV .0 Electrostatic Discharge Rating MIL-STD-883D ESD STG C -55 to 150 Operating and Storage Temperature Range ,T 0.35 Power Dissipation Maximum 0.5 O 0.22 - Continuous Drain/Output Current , I IN GSS , V Gate-Source Voltage , V CC DSS 25 Drain-Source Voltage, Power Supply Voltage , V Units 301 DV Parameter Symbol C unless other wise noted = 25 Absolute Maximum Ratings SOT-223 SO-8 -6 SuperSOT SOT-23 SOIC-16 -8 SuperSOT kV Human Body Model >6 ESD ruggedness Gate-Source Zener for Very low level gate drive requirements allowing GS DS(ON) 4.5 = GS DS(ON) 2.7 = -C 25 Features General Description Digital FET , 301 DV F