Doc No. TT4-EA-14292 Revision. 6 Product Standards MOS FET FJ3P02100L FJ3P02100L Package dimension Unit: mm Silicon P-channel MOSFET 2.0 0.2 3 For Load-switching (0.25) Features 0.3 0.65 1 2 3 Low drain-source ON resistance:RDS(on)typ. = 12.0m VGS = -2.5 V) (0.8) High heat dissipated and ultra-compact package PMCP RoHS compliant (EU RoHS / MSL:Level 1 compliant) 2 1 0.825 Marking Symbol: 0.33 (0.675) A0 Packaging 1. Source 3. Drain 2. Embossed type (Thermo-compression sealing) : 7 000 pcs / reel (standard) Gate Absolute Maximum Ratings Ta = 25 C Panasonic PMCP-2020-Z1 JEITA Parameter Symbol Rating Unit Drain-source voltage VDS -20 V Code Gate-source voltage VGS 8 V *2 ID1 -4.4 Equivalent circuit, Pin name Ta = 25 C, DC Drain current A *3 ID2 -7.5 Ta = 25 C, DC *1 *2 Drain current Ta = 25 C IDp1 -13.2 3 A *1 *3 (Pulsed) IDp2 -22.5 Ta = 25 C *2 Total power PD1 300 Ta = 25 C, DC Rg mW 2 *3 dissipation PD2 850 1. Ta = 25 C, DC Source Channel temperature Tch 150 2. Gate Operating ambient temperature Topr -40 to +85 C Storage temperature range Tstg -55 to +150 3. Drain Note *1 t = 10 s, Duty Cycle < 1% *2 When mounted on glass epoxy board typeA (Refer to Figure1) 1 *3 When mounted on glass epoxy board typeB (Refer to Figure2) Electrical Characteristics Ta = 25 C 3 C Static Characteristics Parameter Symbol Conditions Min Typ Max Unit Drain-source breakdown voltage VDSS ID = -1.0 mA, VGS = 0 V -20 V Zero gate voltage drain current IDSS VDS = -20 V, VGS = 0 V -10 A Gate-source leakage current IGSS VGS = 8 V, VDS = 0 V 10 A Gate-source threshold voltage Vth ID = -1.0 mA, VDS = -10 V -0.3 -0.65 -1.05 V RDS(on)1 ID = -3.7 A, VGS = -4.5 V 9.5 12.5 RDS(on)2 Drain-source on-state resistance ID = -3.7 A, VGS = -2.5 V 12.0 16.5 m RDS(on)3 ID = -3.7 A, VGS = -2.0 V 16.0 30.0 Dynamicic Characteristics Parameter Symbol Conditions Min Typ Max Unit *1 Ciss 3000 Input capacitance *1 VDS = -10 V, VGS = 0 V, f = 1 MHz Output capacitance Coss 330 pF *1 Crss 350 Reverse transfer capacitance Page 1of 6 Established : 2012-10-25 Revised : 2013-07-16 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) 2.0 0.3 0.9Doc No. TT4-EA-14292 Revision. 6 Product Standards MOS FET FJ3P02100L Parameter Symbol Conditions Min Typ Max Unit *1 *2 td(on) 1 Turn-on delay time VDD = -10 V, VGS = 0 to -4 V,ID = -3.7 A s *1 *2 tr 1.9 Rise time *1 *2 td(off) 6.5 Turn-off delay time VDD = -10 V, VGS = -4 to 0 V,ID = -3.7 A s *1 *2 tf 3.9 Fall time Note 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. 2. *1 Assured by design *2 Refer to figure3, measurement circuit for Turn-on delay time / Rise time / Turn-off delay time / Fall time Figure1: Glass epoxy board typeA 2 Material:FR4, Size:25.4mm x 25.4mm x t 1.0mm, Cu pad:tickness 36 m, 25.9mm Cu pad 25.4mm 25.4mm Figure2: Glass epoxy board typeB 2 Material:FR4, Size:25.4mm x 25.4mm x t 1.0mm, Cu pad:tickness 36 m, 82.0mm Cu 25.4mm 25.4mm Page 2 of 6 Established : 2012-10-25 Revised : 2013-07-16 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type)