X-On Electronics has gained recognition as a prominent supplier of FK3506010L MOSFETs across the USA, India, Europe, Australia, and various other global locations. FK3506010L MOSFETs are a product manufactured by Panasonic. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FK3506010L Panasonic

FK3506010L electronic component of Panasonic
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See Product Specifications
Part No.FK3506010L
Manufacturer: Panasonic
Category: MOSFETs
Description: Panasonic MOSFET NCH MOS FET FLT LD 2.0x2.1mm
Datasheet: FK3506010L Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 6000
Multiples : 6000
6000 : USD 0.0762
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.4515
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.4984
10 : USD 0.3588
100 : USD 0.2114
500 : USD 0.1201
1000 : USD 0.092
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.9082
10 : USD 0.7159
100 : USD 0.1731
500 : USD 0.1218
1000 : USD 0.0898
3000 : USD 0.0694
9000 : USD 0.0588
24000 : USD 0.0513
45000 : USD 0.0491
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Configuration
Brand
Forward Transconductance - Min
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Product
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FK3506010L from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FK3506010L and other electronic components in the MOSFETs category and beyond.

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Doc No. TT4-EA-12624 Revision. 3 Product Standards MOS FET FK3506010L FK3506010L Silicon N-channel MOS FET Unit : mm For switching 2.0 FK330601 in SMini3 type package 0.3 0.13 3 Features Low drive voltage : 2.5 V drive Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 12 Marking Symbol : CV 0.9 (0.65)(0.65) Packaging 1.3 Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 1. Gate 2. Source Drain 3. Absolute Maximum Ratings Ta = 25 C Panasonic SMini3-F2-B JEITA SC-85 Parameter Symbol Rating Unit Drain-source voltage VDS 60 V Code Gate-source voltage VGS 12 V Drain current ID 100 mA Pulse drain current IDp 200 mA Internal Connection Total power dissipation PD 150 mW (D) 3 Channel temperature Tch 150 C Operating ambient temperature Topr -40 to +85 C Storage temperature Tstg -55 to +150 C 1 2 (G) (S) Pin Name 1. Gate 2. Source Drain 3. Page15of Established : 2010-06-07 Revised : 2013-07-08 1.25 2.1Doc No. TT4-EA-12624 Revision. 3 Product Standards MOS FET FK3506010L Electrical Characteristics Ta = 25 C 3C Parameter Symbol Conditions Min Typ Max Unit Drain-source breakdown voltage VDSS ID = 1 mA, VGS = 0 60 V Drain-source cutoff current IDSS VDS = 60 V, VGS = 0 1.0 A Gate-source cutoff current IGSS VGS = 10 V, VDS = 0 10 A Gate threshold voltage VTH 0.9 1.2 1.5 V ID = 1.0 A, VDS = 3.0 V ID = 10 mA, VGS = 2.5 V 8 15 Drain-source ON resistance RDS(on) ID = 10 mA, VGS = 4.0 V 6 12 Forward transfer admittance Yfs ID = 10 mA, VDS = 3.0 V 20 60 mS Input capacitance Ciss 12 pF Output capacitance Coss VDS = 3 V, VGS = 0, f = 1 MHz 7 pF Reverse transfer capacitance Crss 3 pF VDD = 3 V, VGS = 0 to 3 V, *1 ton 100 ns Turn-on time ID = 10 mA VDD = 3 V, VGS = 3 to 0 V, *1 toff 100 ns Turn-off time ID = 10 mA Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. 2. *1 Turn-on and Turn-off test circuit VVDDDD=3V=3V IIDD=1=10m0mAA RRLL=3=30000 90% DD VoVoutut 10% V GS ViVinn VV GGSS==003V3V 10% GG V out 5050 90% SS ton toff Page 2of 5 Established : 2010-06-07 Revised : 2013-07-08

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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