Doc No. TT4-EA-12624 Revision. 3 Product Standards MOS FET FK3506010L FK3506010L Silicon N-channel MOS FET Unit : mm For switching 2.0 FK330601 in SMini3 type package 0.3 0.13 3 Features Low drive voltage : 2.5 V drive Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 12 Marking Symbol : CV 0.9 (0.65)(0.65) Packaging 1.3 Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 1. Gate 2. Source Drain 3. Absolute Maximum Ratings Ta = 25 C Panasonic SMini3-F2-B JEITA SC-85 Parameter Symbol Rating Unit Drain-source voltage VDS 60 V Code Gate-source voltage VGS 12 V Drain current ID 100 mA Pulse drain current IDp 200 mA Internal Connection Total power dissipation PD 150 mW (D) 3 Channel temperature Tch 150 C Operating ambient temperature Topr -40 to +85 C Storage temperature Tstg -55 to +150 C 1 2 (G) (S) Pin Name 1. Gate 2. Source Drain 3. Page15of Established : 2010-06-07 Revised : 2013-07-08 1.25 2.1Doc No. TT4-EA-12624 Revision. 3 Product Standards MOS FET FK3506010L Electrical Characteristics Ta = 25 C 3C Parameter Symbol Conditions Min Typ Max Unit Drain-source breakdown voltage VDSS ID = 1 mA, VGS = 0 60 V Drain-source cutoff current IDSS VDS = 60 V, VGS = 0 1.0 A Gate-source cutoff current IGSS VGS = 10 V, VDS = 0 10 A Gate threshold voltage VTH 0.9 1.2 1.5 V ID = 1.0 A, VDS = 3.0 V ID = 10 mA, VGS = 2.5 V 8 15 Drain-source ON resistance RDS(on) ID = 10 mA, VGS = 4.0 V 6 12 Forward transfer admittance Yfs ID = 10 mA, VDS = 3.0 V 20 60 mS Input capacitance Ciss 12 pF Output capacitance Coss VDS = 3 V, VGS = 0, f = 1 MHz 7 pF Reverse transfer capacitance Crss 3 pF VDD = 3 V, VGS = 0 to 3 V, *1 ton 100 ns Turn-on time ID = 10 mA VDD = 3 V, VGS = 3 to 0 V, *1 toff 100 ns Turn-off time ID = 10 mA Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. 2. *1 Turn-on and Turn-off test circuit VVDDDD=3V=3V IIDD=1=10m0mAA RRLL=3=30000 90% DD VoVoutut 10% V GS ViVinn VV GGSS==003V3V 10% GG V out 5050 90% SS ton toff Page 2of 5 Established : 2010-06-07 Revised : 2013-07-08