X-On Electronics has gained recognition as a prominent supplier of SPP16N50C3XKSA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SPP16N50C3XKSA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SPP16N50C3XKSA1 Infineon

SPP16N50C3XKSA1 electronic component of Infineon
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Part No.SPP16N50C3XKSA1
Manufacturer: Infineon
Category: MOSFETs
Description: Infineon Technologies MOSFET N-Ch 560V 16A TO220-3
Datasheet: SPP16N50C3XKSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0

Multiples : 500
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 2.6888
10 : USD 2.2869
100 : USD 1.982
250 : USD 1.885
500 : USD 1.684
1000 : USD 1.5059
2500 : USD 1.5059
5000 : USD 1.4947
10000 : USD 1.4047
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Qg - Gate Charge
Tradename
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SPP16N50C3XKSA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SPP16N50C3XKSA1 and other electronic components in the MOSFETs category and beyond.

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SPP16N50C3 SPI16N50C3, SPA16N50C3 Cool MOS Power Transistor V T 560 V DS jmax Feature R 0.28 DS(on) New revolutionary high voltage technology I 16 A D Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated 2 Extreme dv/dt rated 3 Ultra low effective capacitances 2 3 2 1 1 P-TO220-3-31 Improved transconductance P-TO220-3-1 PG-TO-220-3-31 -3-111: Fully isolated package (2500 VAC 1 minute) Type Package Ordering Code Marking SPP16N50C3 PG-TO220 Q67040-S4583 16N50C3 SPI16N50C3 PG-TO262 Q67040-S4582 16N50C3 SPA16N50C3 PG-TO220FP 16N50C3 SP000216351 Maximum Ratings Parameter Symbol Value Unit SPP I SPA Continuous drain current I A D 1) T = 25 C 16 16 C 1) T = 100 C 10 10 C Pulsed drain current, t limited by T I 48 48 A p jmax D puls Avalanche energy, single pulse E 460 460 mJ AS I =8, V =50V D DD 2) E Avalanche energy, repetitive t limited by T 0.64 0.64 AR AR jmax I =16A, V =50V D DD Avalanche current, repetitive t limited by T I 16 16 A AR jmax AR Gate source voltage V 20 20 V GS V Gate source voltage AC (f >1Hz) 30 30 GS Power dissipation, T = 25C P 160 34 W C tot -55...+150 Operating and storage temperature T , T C j stg 6) Reverse diode dv/dt dv/dt 15 V/ns age 1 Rev. 3.2 p 2009-12-22SPP16N50C3 SPI16N50C3, SPA16N50C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope dv/dt 50 V/ns V = 400 V, I = 16 A, T = 125 C DS D j Thermal Characteristics Parameter Symbol Values Unit min. typ. max. R - - 0.78 K/W Thermal resistance, junction - case thJC - - 3.7 Thermal resistance, junction - case, FullPAK R thJC FP R - - 62 Thermal resistance, junction - ambient, leaded thJA - - 80 Thermal resistance, junction - ambient, FullPAK R thJA FP - - 260 C Soldering temperature, wavesoldering T sold 3) 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at T =25C unless otherwise specified j Parameter Symbol Conditions Values Unit min. typ. max. V V =0V, I =0.25mA - - V Drain-source breakdown voltage 500 (BR)DSS GS D V =0V, I =16A - 600 - Drain-Source avalanche V GS D (BR)DS breakdown voltage I =675A, V =V 2.1 3 3.9 Gate threshold voltage V D GS DS GS(th) V =500V, V =0V, A Zero gate voltage drain current I DSS DS GS T =25C - 0.1 1 j T =150C - - 100 j V =20V, V =0V - - 100 nA Gate-source leakage current I GSS GS DS V =10V, I =10A Drain-source on-state resistance R DS(on) GS D T =25C - 0.25 0.28 j T =150C - 0.68 - j Gate input resistance R f=1MHz, open drain - 1.5 - G age 2 Rev. 3.2 p 2009-12-22

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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