MDD1904RH Magnachip

MDD1904 Single N-Channel Trench MOSFET 100V MDD1904 Single N-channel Trench MOSFET 100V, 10.8A, 140m General Description Features The MDD1904 uses advanced MagnaChip s MOSFET V = 100V DS Technology, which provides high performance in on-state I = 10.8A V = 10V D GS resistance, fast switching performance and excellent RDS(ON) (MAX) quality. MDD1904 is suitable device for DC to DC < 140m V = 10V GS converter and general purpose applications. < 150m V = 6.0V GS D G S o Absolute Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating Unit Drain-Source Voltage V 100 V DSS Gate-Source Voltage V 20 V GSS o T =25 C 10.8 C (1) Continuous Drain Current I A D o T =70 C 8.7 C Pulsed Drain Current I 25 A DM o T =25 C 35.8 C Power Dissipation P W D o TC=70 C 22.9 (2) Single Pulse Avalanche Energy E 12.5 mJ AS o Junction and Storage Temperature Range T , T -55~150 C J stg Thermal Characteristics Characteristics Symbol Rating Unit (1) Thermal Resistance, Junction-to-Ambient R 52 JA o C/W Thermal Resistance, Junction-to-Case R 3.5 JC 1 Apr. 2012. Version 1.0 MagnaChip Semiconductor Ltd. MDD1904 Single N-Channel Trench MOSFET 100V Ordering Information Part Number Temp. Range Package Packing Rohs Status o MDD1904RH -55~150 C D-PAK Tape & Reel Halogen Free o Electrical Characteristics (T =25 C) J Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BV I = 250A, V = 0V 100 - - DSS D GS V Gate Threshold Voltage V V = V , I = 250A 1.0 2.0 3.0 GS(th) DS GS D Drain Cut-Off Current I V = 80V, V = 0V - - 1 DSS DS GS A Gate Leakage Current I V = 20V, V = 0V - - 0.1 GSS GS DS V = 10V, I = 8.0A - 116 140 GS D Drain-Source ON Resistance R m DS(ON) VGS = 6.0V, ID = 8.0A - 124 150 Forward Transconductance g V = 10V, I = 8.0A - 13.5 - S fs DS D Dynamic Characteristics Total Gate Charge Q - 6.7 - g(10V) V = 50.0V, I = 8.0A, DS D Gate-Source Charge Q - 1.3 - nC gs V = 10V GS Gate-Drain Charge Q - 1.8 - gd Input Capacitance C - 355 - iss V = 25.0V, V = 0V, DS GS Reverse Transfer Capacitance C - 16 - pF rss f = 1.0MHz Output Capacitance C - 51 - oss Turn-On Delay Time t - 6.7 - d(on) Rise Time tr - 3.6 - V = 10V, V = 50V, GS DS Ns ID = 8.0A , RG = 3.0 Turn-Off Delay Time t - 13.7 - d(off) Fall Time t - 3.3 - f Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage V I = 8.0A, V = 0V - 0.75 1.2 V SD S GS Body Diode Reverse Recovery Time t - 36.5 - Ns rr I = 8.0A, dl/dt = 100A/s F Body Diode Reverse Recovery Charge Q - 58.5 - nC rr Note : 1. Surface mounted FR-4 board by JEDEC (jesd51-7) 2. E is tested at starting Tj = 25 , L = 1.0mH, I = 5.0A, V = 50V, V = 10V AS AS DD GS 2 Apr. 2012. Version 1.0 MagnaChip Semiconductor Ltd.