Doc No. TT4-EA-14954 Revision. 2 Product Standards MOS FET FK4B01100L FK4B01100L Single N-channel MOS FET Unit: mm For oad switching circuits 0.80 43 TOP Features Low Drain-source ON resistance:RDS(on) typ. = 27 m (VGS = 2.5 V) 12 CSP (Chip Size Package) RoHS compliant (EU RoHS / MSL:Level 1 compliant) 0.20 Marking Symbol: 1A BOTTOM Packaging Embossed type (Thermo-compression sealing) : 20 000 pcs / reel (standard) 0.40 0.60 1. Gate 3. Source 2. Drain 4. Source Absolute Maximum Ratings Ta = 25 C Panasonic XLGA004-W-0808-RA01 JEITA Parameter Symbol Rating Unit Drain-Source Voltage VDS 12 V Code Gate-Source Voltage VGS 8 V *1 3.4 Internal Connection ID1 *2 Drain Current 5.2 A ID2 2(D) *3 6.5 ID3 *1*4 27 IDp1 *2*4 Peak Drain Current 41 A IDp2 *3*4 52 IDp3 *1 0.36 PD1 *2 Power Dissipation 0.82 W PD2 *3 1.3 PD3 1(G) 3,4(S) Channel Temperature Tch 150 C Operating Ambient Temperature Topr -40 ~ +85 C Tstg -55 ~ +150 C Storage Temperature 2 Note *1 FR4 board (25.4mm25.4mmt1.0mm) Min Cu 36mm Copper *2 FR4 board (25.4mm25.4mmt1.0mm) Full Cu *3 Ceramic substrate (70mm70mmt1.0mm) *4 t = 10 s, Duty Cycle < 1% 1 of 6 Page Established : 2014-03-24 Revised : 2014-12-15 0.40 0.80 0.10 0.60Doc No. TT4-EA-14954 Revision. 2 Product Standards MOS FET FK4B01100L Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID = 1 mA, VGS = 0 12 V Zero Gate Voltage Drain Current IDSS VDS = 12 V, VGS = 0 10 A Gate-Source Leakage Current IGSS VGS = 8 V, VDS = 0 V 10 A Gate Threshold Voltage Vth ID = 236 A, VDS =10 V 0.3 1.0 V ID = 1.5 A, VGS = 4.5 V 22 30 ID = 1.0 A, VGS = 2.5 V 27 40 RDS(on) Drain-Source ON Resistance m ID = 0.5 A, VGS = 1.8 V 33 56 ID = 0.25 A, VGS = 1.5 V 43 99 *1 Ciss VDS = 10 V 275 Input Capacitance *1 Coss VGS = 0 pF Output Capacitance 100 *1 Crss f = 1MHz 70 Reverse Transfer Capacitance *1,*2 td(on) 7 Turn-on delay time VDD = 6 V *1,*2 tr 14 Rise time VGS = 0 to 4.5 V ns *1,*2 td(off) 165 Turn-off delay time ID=1.0 A *1,*2 tf 76 Fall time *1 Qg 5.8 nC Total Gate Charge VDD = 6 V *1 Qgs VGS = 4.5 V 0.75 nC Gate to Source Charge *1 IS= 1.0 A Qgd 0.95 nC Gate to Drain Miller Charge Body Diode Forward Voltage VF(D-S) IF = 0.2A, VGS = 0V 0.6 1.2 V Note Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. *1 Guaranteed by design, not subject to production testing *2 Measurement circuit for Turn-on delay time / Rise time / Turn-off delay time / Fall time Electrical State Discharge Characteristics Standard Test Type Symbol Conditions Class Value Unit C = 100 pF, R = 1.5 k >1k to 2k Human body model HBM H1C V AEC-Q101-001 Machine model MM C = 200 pF, R = 0 M2 >100 to 200 V 2 of 6 Page Established : 2014-03-24 Revised : 2014-12-15