X-On Electronics has gained recognition as a prominent supplier of FK4B01110L1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. FK4B01110L1 MOSFETs are a product manufactured by Panasonic. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FK4B01110L1 Panasonic

FK4B01110L1 electronic component of Panasonic
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See Product Specifications
Part No.FK4B01110L1
Manufacturer: Panasonic
Category: MOSFETs
Description: MOSFET ULT SM CSP SNGL N-CH MOSFET 0.6x0.6x0.1mm
Datasheet: FK4B01110L1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.5744
10 : USD 0.4972
100 : USD 0.3441
500 : USD 0.2763
1000 : USD 0.2193
2000 : USD 0.1942
5000 : USD 0.1838
10000 : USD 0.171
25000 : USD 0.1652
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FK4B01110L1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FK4B01110L1 and other electronic components in the MOSFETs category and beyond.

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Doc No. TT4-EA-14955 Revision. 1 Product Standards MOS FET FK4B01110L FK4B01110L Single N-channel MOS FET Unit: mm For Load switching circuits 0.60 43 TOP Features Low Drain-source ON resistance:RDS(on) typ. = 57m (VGS = 2.5 V) 1 2 CSP (Chip Size Package) RoHS compliant (EU RoHS / MSL:Level 1 compliant) 0.15 Marking Symbol: 1B BOTTOM Packaging 0.30 Embossed type (Thermo-compression sealing) : 20 000 pcs / reel (standard) 0.45 1. Gate 3. Source 2. Drain 4. Source Panasonic ALGA004-W-0606-RA01 Absolute Maximum Ratings Ta = 25 C JEITA Code Parameter Symbol Rating Unit Drain-Source Voltage VDS 12 V Gate-Source Voltage VGS 8 V *1 2.3 Internal Connection ID1 *2 Drain Current 3.4 A ID2 2(D) *3 4.1 ID3 *1*4 18 IDp1 *2*4 Peak Drain Current 27 A IDp2 *3*4 32 IDp3 *1 0.34 PD1 *2 Power Dissipation 0.76 W PD2 *3 1.1 PD3 1(G) 3,4(S) Channel Temperature Tch 150 C Operating Ambient Temperature Topr -40 ~ +85 C Tstg -55 ~ +150 C Storage Temperature 2 Note *1 FR4 board (25.4mm25.4mmt1.0mm)Min Cu 36mm Copper *2 FR4 board (25.4mm25.4mmt1.0mm)Full Cu *3 Ceramic substrate (70mm70mmt1.0mm) *4 t = 10 s, Duty Cycle < 1% 1 of 6 Page Established : 2014-03-24 Revised : ####-##-## 0.60 0.30 0.10 0.45Doc No. TT4-EA-14955 Revision. 1 Product Standards MOS FET FK4B01110L Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID = 1 mA, VGS = 0 12 V Zero Gate Voltage Drain Current IDSS VDS = 12 V, VGS = 0 10 A Gate-Source Leakage Current IGSS VGS = 8 V, VDS = 0 V 10 A Gate Threshold Voltage Vth ID = 118 A, VDS =10 V 0.3 1.0 V ID = 1.5 A, VGS = 4.5 V 47 64 ID = 1.0 A, VGS = 2.5 V 57 84 Drain-Source ON Resistance RDS(on) m ID = 0.5 A, VGS = 1.8 V 70 119 ID = 0.25 A, VGS = 1.5 V 91 210 *1 Ciss VDS = 10 V 274 Input Capacitance *1 Coss VGS = 0 63 pF Output Capacitance *1 f = 1MHz Crss 42 Reverse Transfer Capacitance *1,*2 td(on) Turn-on delay time 3.6 VDD = 6 V *1,*2 tr 3 Rise time VGS = 0 to 4.5 V ns *1,*2 td(off) 34 Turn-off delay time ID=1.0 A *1,*2 tf Fall time 38 *1 Qg 2.55 nC Total Gate Charge VDD = 6 V *1 Qgs VGS = 4.5 V 0.55 nC Gate to Source Charge *1 Qgd ID = 1.0 A 0.55 nC Gate to Drain Miller Charge Body Diode Forward Voltage VF(D-S) IF = 0.2A, VGS = 0V 0.6 1.2 V Note Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. *1 Guaranteed by design, not subject to production testing *2 Measurement circuit for Turn-on delay time / Rise time / Turn-off delay time / Fall time Electrical State Discharge Characteristics Standard Test Type Symbol Conditions Class Value Unit HBM C = 100 pF, R = 1.5 k >500 to 1k Human body model H1B V AEC-Q101-001 Machine model MM C = 200 pF, R = 0 M1B >50 to 100 V 2 of 6 Page Established : 2014-03-24 Revised : ####-##-##

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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