X-On Electronics has gained recognition as a prominent supplier of FK6K02010L MOSFETs across the USA, India, Europe, Australia, and various other global locations. FK6K02010L MOSFETs are a product manufactured by Panasonic. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FK6K02010L Panasonic

FK6K02010L electronic component of Panasonic
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Part No.FK6K02010L
Manufacturer: Panasonic
Category: MOSFETs
Description: MOSFET NCH MOS FET FLT LD 2.0x2.1mm
Datasheet: FK6K02010L Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 1.9418
10 : USD 0.9398
100 : USD 0.525
500 : USD 0.4153
1000 : USD 0.3325
3000 : USD 0.3003
6000 : USD 0.2838
9000 : USD 0.2713
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Rds On
Factory Pack Quantity :
Product
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FK6K02010L from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FK6K02010L and other electronic components in the MOSFETs category and beyond.

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Doc No. TT4-EA-12566 Revision. 2 Product Standards MOS FET FK6K02010L FK6K02010L Silicon N-channel MOS FET Unit : mm 2.0 For switching 0.2 0.13 6 5 4 Features Low drain-source On-state Resistance:RDS(on)typ. = 13 m VGS = 4.5 V) Low drive voltage: 2.5 V drive Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL : Level 1 compliant) 12 3 0.7 Marking Symbol : TA (0.65)(0.65) 1.3 Packaging Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) 1. Drain 4. Source 2. Drain 5. Drain 3. Gate 6. Drain Panasonic WSMini6-F1-B Absolute Maximum Ratings Ta = 25 C JEITA SC-113DA Parameter Symbol Rating Unit Drain-source surrender voltage VDSS 20 V Code Gate-source surrender voltage VGSS 10 V Drain current ID 4.5 A Internal Connection *1 IDp 18 A Peak drain current *2 PD 700 mW Power dissipation Channel temperature Tch 150 C Operating ambient temperature Topr -40 to + 85 C Storage temperature Tstg -55 to +150 C Note) *1 t = 10 s, Duty Cycle < 1% *2 Measuring on Glass epoxy board (25.4 25.4 t0.8 mm) 2 coated with copper foil, which has more than 300 mm Absolute maximum rating without heat sink for PD is 150 mW. Pin Name 1. Drain 4. Source 2. Drain 5. Drain 3. Gate 6. Drain Page 1of 6 Established : 2010-06-07 Revised : 2013-07-01 1.7 2.1Doc No. TT4-EA-12566 Revision. 2 Product Standards MOS FET FK6K02010L Electrical Characteristics Ta = 25 C 3C Parameter Symbol Conditions Min Typ Max Unit Drain-source surrender voltage VDSS ID = 1 mA, VGS = 0 20 V Drain-source cutoff current IDSS VDS = 20 V, VGS = 0 1.0 A Gate-source cutoff current IGSS VGS = 8 V, VDS = 0 10 A Gate threshold voltage Vth ID = 1.0 mA, VDS = 10.0 V 0.4 0.85 1.3 V RDS(ON)1 ID = 2.0 A, VGS = 4.5 V 13 17.5 Drain-source ON resistance m RDS(ON)2 ID = 1.0 A, VGS = 2.5 V 16 28 Forward transfer admittance |Yfs| ID = 1.0 A, VDS =10 V 3.0 S Short-circuit input capacitance (Common source) Ciss 1 730 pF Short-circuit output capacitance (Common source) Coss VDS = 10 V, VGS = 0, f = 1 MHz 155 pF Reverse transfer capacitance (Common source) Crss 150 pF *1 td(on) 19 ns Turn-on delay time VDD = 10 V *1 tr Rise time 30 ns VGS = 0 to 4 V *1 td(off) 150 ns Turn-off delay time ID=1.0A *1 tf 75 ns Fall time Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. 2. *1 Measurement circuit for Turn-on Delay Time/Rise Time/Turn-off Delay Time/Fall Time Page 2of 6 Established : 2010-06-07 Revised : 2013-07-01

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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