MMBF170
N-CHANNEL ENHANCEMENT MODE MOSFET
Features Mechanical Data
Low On-Resistance Case: SOT23
Low Gate Threshold Voltage Case Material: Molded Plastic. UL Flammability Classification
Low Input Capacitance Rating 94V-0
Fast Switching Speed
Moisture Sensitivity: Level 1 per J-STD-020
Low Input/Output Leakage
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Halogen and Antimony Free. Green Device (Note 3)
Terminal Connections: See Diagram
Qualified to AEC-Q101 Standards for High Reliability
Weight: 0.008 grams (approximate)
D
SOT23
D
G
S
G
S
Top View Equivalent Circuit
Top View
Ordering Information (Note 4)
Part Number Case Packaging
MMBF170-7-F SOT23 3000/Tape & Reel
MMBF170-13-F SOT23 10000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant
2. See
MMBF170
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage 60 V
V
DSS
60 V
Drain-Gate Voltage R 1.0M V
GS DGR
Gate-Source Voltage Continuous 20
V
V
GSS
Pulsed 40
Drain Current (Note 5) Continuous 500
I mA
D
Pulsed 800
Thermal Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
300 mW
Total Power Dissipation (Note 5) P
D
1.80 mW/C
Thermal Resistance, Junction to Ambient R 417 K/W
JA
Operating and Storage Temperature Range T , T -55 to +150 C
J STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage BV 60 70 V V = 0V, I = 100 A
DSS GS D
Zero Gate Voltage Drain Current I 1.0 A V = 60V, V = 0V
DSS DS GS
Gate-Body Leakage I 10 nA V = 15V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage 0.8 2.1 3.0 V
V V = V , I = 250 A
GS(th) DS GS D
5.0 V = 10V, I = 200mA
GS D
Static Drain-Source On-Resistance
R
DS (ON)
5.3
V = 4.5V, I = 50mA
GS D
Forward Transconductance g 80 mS V =10V, I = 0.2A
FS DS D
DYNAMIC CHARACTERISTICS
Input Capacitance C 22 40 pF
iss
Output Capacitance C 11 30 pF V = 10V, V = 0V, f = 1.0MHz
oss DS GS
Reverse Transfer Capacitance C 2.0 5.0 pF
rss
SWITCHING CHARACTERISTICS
Turn-On Time t 10 ns
on V = 25V, I = 0.5A,
DD D
Turn-Off Time 10 ns V = 10V, R = 50
t GS GEN
off
Notes: 5. Device mounted on FR-4 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our
website at