Advance Technical Information Trench Gate HiperFET V = 200V FMM60-02TF DSS N-Channel Power MOSFET I = 33A D25 R 40m DS(on) 33 T1 t = 82ns rr(typ) 5 5 4 4 Phase Leg Topology T2 11 TM ISOPLUS i4-Pak 2 2 Symbol Test Conditions Maximum Ratings T -55 ... +150 C 1 J T 150 C Isolated Tab JM T -55 ... +150 C stg 5 V 50/60H , RMS, t = 1min, leads-to-tab 2500 ~V ISOLD Z T 1.6mm (0.062 in.) from case for 10s 300 C L T Plastic body for 10s 260 C SOLD F Mounting force 20..120 / 4.5..27 N/lb. Features C z Silicon chip on Direct-Copper Bond (DCB) substrate Symbol Test Conditions Maximum Ratings - UL recognized package V T = 25C to 150C 200 V - Isolated mounting surface DSS J - 2500V electrical isolation V T = 25C to 150C, R = 1M 200 V DGR J GS z Avalanche rated V Transient 30 V z GSM Low Q G z Low Drain-to-Tab capacitance I T = 25C 33 A D25 C z Low package inductance I T = 25C, pulse width limited by T 150 A DM C JM I T = 25C 5 A A C Advantages E T = 25C 1 J AS C z dV/dt I I , V V ,T 150C 10 V/ns Low gate drive requirement S DM DD DSS J z High power density P T = 25C 125 W D C z Fast intrinsic rectifier z Low drain to ground capacitance z Fast switching Symbol Test Conditions Characteristic Values Applications Min. Typ. Max. z DC and AC motor drives C Coupling capacitance between shorted 40 pF P z UPS, solar and wind power inverters pins and mounting tab in the case z Synchronous rectifiers z d ,d pin - pin 1.7 mm Multi-phase DC to DC converters S A z d ,d pin - backside metal 5.5 mm Industrial battery chargers S A z Switching power supplies Weight 9 g 2008 IXYS CORPORATION, All rights reserved DS100048(09/08)FMM60-02TF 2 TM Symbol Test Conditions Characteristic Values ISOPLUS i4-Pak Outline (T = 25C unless otherwise specified) Min. Typ. Max. J BV V = 0V, I = 250A 200 V DSS GS D V V = V , I = 250A 2.5 4.5 V GS(th) DS GS D I V = 20 V, V = 0V 200 nA GSS GS DS I V = V 5 A DSS DS DSS V = 0V T = 125C 250 A GS J R V = 10V, I = 30A, Note 1 32 40 m DS(on) GS D g V = 10V, I = 60A, Note 1 40 62 S fs DS D C 3700 pF iss C V = 0V, V = 25 V, f = 1 MHz 520 pF oss GS DS C 37 pF rss t Resistive Switching Times 39 ns d(on) t V = 10V, V = 0.5 z V , I = 30A 46 ns r GS DS DSS D t R = 5 (External) 75 ns d(off) G t 42 ns f Q 90 nC g(on) Q V = 10V, V = 0.5 z V , I = 30A 33 nC gs GS DS DSS D Q 21 nC gd Ref: IXYS CO 0077 R0 R 1.0 C/W thJC R 0.15 C/W thCS Source-Drain Diode Characteristic Values T = 25C unless otherwise specified) J 3 Symbol Test Conditions Min. Typ. Max. I V = 0V 33 A S GS I Repetitive, pulse width limited by T 150 A SM JM V I = 60A, V = 0V, Note 1 1.5 V SD F GS t 82 ns I = 25A, -di/dt = 100A/s rr F I 15.3 A RM V = 100V, V = 0V R GS Q 0.63 C RM Note 1: Pulse test, t 300s, duty cycle, d 2 %. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated objective result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537