MDD1901RH Magnachip

MDD1901 Single N-Channel Trench MOSFET 100V MDD1901 Single N-channel Trench MOSFET 100V, 40A, 22m General Description Features The MDD1901 uses advanced MagnaChip s MOSFET V = 100V DS Technology, which provides high performance in on-state I = 40A V = 10V D GS resistance, fast switching performance and excellent R DS(ON) quality. MDD1901 is suitable device for DC/DC < 22m V = 10V GS Converters and general purpose applications. < 25m V = 6.0V GS D G S o Absolute Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating Unit Drain-Source Voltage V 100 V DSS Gate-Source Voltage V 20 V GSS o T =25 C 40 A C (1) Continuous Drain Current I D o T =100 C 24 A C I DM Pulsed Drain Current 80 A o T =25 C 70 C Power Dissipation PD W o T =100 C 28 C (2) Single Pulse Avalanche Energy E 200 mJ AS o Junction and Storage Temperature Range T , T -55~150 C J stg Thermal Characteristics Characteristics Symbol Rating Unit Thermal Resistance, Junction-to-Ambient R 40 JA o C/W (1) Thermal Resistance, Junction-to-Case R 1.8 JC 1 August. 2010. Version 1.2 MagnaChip Semiconductor Ltd. MDD1901 Single N-Channel Trench MOSFET 100V Ordering Information Part Number Temp. Range Package Packing Rohs Status o MDD1901RH -55~150 C D-PAK Tape & Reel Halogen Free o Electrical Characteristics (Tc =25 C) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BV I = 250A, V = 0V 100 - - DSS D GS V Gate Threshold Voltage V V = V , I = 250A 2.0 2.8 4.0 GS(th) DS GS D Drain Cut-Off Current I V = 80V, V = 0V - - 1 DSS DS GS A Gate Leakage Current I V = 20V, V = 0V - - 0.1 GSS GS DS V = 10V, I = 35A - 17 22 GS D o Drain-Source ON Resistance R T =125 C - 28 33 m DS(ON) J V = 6.0V, I = 20A 19 25 GS D Forward Transconductance g V = 5V, I = 35A - 35 - S fs DS D Dynamic Characteristics Total Gate Charge Q - 75 100 g V = 50V, I = 20A, DS D Gate-Source Charge Q - 12 - nC gs V = 10V GS Gate-Drain Charge Q - 20 - gd Input Capacitance C - 3090 - iss V = 30V, V = 0V, DS GS Reverse Transfer Capacitance C - 160 - pF rss f = 1.0MHz Output Capacitance C - 235 - oss Gate Resistance R V =0V,V =0V,F=1MHz - 0.8 - g GS DS Turn-On Delay Time t - 15 21 d(on) Rise Time t - 26 36 r V =50V, V =10V, DS GS ns R =1.15, R =2.5 L GEN Turn-Off Delay Time t - 69 96 d(off) Fall Time t - 15 21 f Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage V I = 1A, V = 0V - 0.7 1.2 V SD S GS Body Diode Reverse Recovery Time t - 70 100 ns rr I = 20A, dl/dt = 100A/s F Body Diode Reverse Recovery Charge Q - 240 - nC rr Note : 1. Surface mounted RF4 board with 2oz. Copper. 2. Starting T =25C, L=1mH, I =20A, V =50V, V =10V J AS DD GS 2 August. 2010. Version 1.2 MagnaChip Semiconductor Ltd.