Doc No. TT4-EA-14953
Revision. 1
Product Standards
MOS FET
FJ4B01110L
FJ4B01110L
Single P-channel MOS FET
Unit: mm
For Load switching circuits
0.60
4 3
TOP
Features
Drain-source ON resistance:Rds(on) typ. = 141 m ( VGS = -2.5 V )
1 2
CSP (Chip Size Package)
RoHS compliant (EU RoHS / MSL:Level 1 compliant)
0.15
Marking Symbol: 1E
BOTTOM
Packaging
0.30
Embossed type (Thermo-compression sealing) : 20 000 pcs / reel (standard)
0.45
1. Gate 3. Source
2. Drain 4. Source
Absolute Maximum Ratings Ta = 25 C Panasonic ALGA004-W-0606-RA01
JEITA
Parameter Symbol Rating Unit
Drain-Source Voltage VDS -12 V Code
Gate-Source Voltage VGS 8 V
*1
-1.4
ID1
*2
Drain Current -2.2 A Internal Connection
ID2
*3
-2.6
ID3
2(D)
*1*4
-11
IDp1
*2*4
Peak Drain Current -17 A
IDp2
*3*4
-20
IDp3
*1
0.34
PD1
*2
Power Dissipation 0.76 W
PD2
*3
1.1
PD3
Channel Temperature Tch 150 C
1(G) 3,4(S)
Operating Ambient Temperature Topr -40 ~ +85 C
Tstg -55 ~ +150 C
Storage Temperature
2
Note *1 FR4 board (25.4mm25.4mmt1.0mm)Min Cu 36mm Copper
*2 FR4 board (25.4mm25.4mmt1.0mm)Full Cu
*3 Ceramic substrate (70mm70mmt1.0mm)
*4 t = 10 s, Duty Cycle < 1%
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Established : 2014-03-24
Revised : ####-##-##
0.60
0.30
0.10
0.45Doc No. TT4-EA-14953
Revision. 1
Product Standards
MOS FET
FJ4B01110L
Electrical Characteristics Ta = 25 C 3 C
Parameter Symbol Conditions Min Typ Max Unit
Drain-Source Breakdown Voltage VDSS
ID = -1 mA, VGS = 0 -12 V
Zero Gate Voltage Drain Current IDSS VDS = -12 V, VGS = 0 -10 A
Gate-Source Leakage Current IGSS VGS = 8 V, VDS = 0 V 10 A
Gate Threshold Voltage Vth ID = -0.598 mA, VDS =-10 V -0.3 -1.0 V
ID = -0.7 A, VGS = -4.5 V 118 153
ID = -0.7 A, VGS = -2.5 V 141 183
Drain-Source ON Resistance RDS(on)
m
ID = -0.2 A, VGS = -1.8 V 169 287
ID = -0.1 A, VGS = -1.5 V 199 597
*1
Ciss VDS = -10 V 226
Input Capacitance
*1
Coss VGS = 0 62 pF
Output Capacitance
*1
f = 1MHz
Crss 51
Reverse Transfer Capacitance
*1,*2
td(on)
Turn-on delay time 3.8
VDD = -6 V
*1,*2
tr 2.5
Rise time
VGS = 0 to -4.5 V ns
*1,*2
td(off) 30
Turn-off delay time
ID = -1.0 A
*1,*2
tf
Fall time 5.4
*1
Qg 3.3 nC
Total Gate Charge VDD = -6 V
*1
Qgs VGS = -4.5 V 0.55 nC
Gate to Source Charge
*1
Qgd ID = -1.0 A 0.65 nC
Gate to Drain Miller Charge
Body Diode Forward Voltage VF(D-S) IF = -0.2A, VGS = 0V -0.7 -1.2 V
Note Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
*1 Guaranteed by design, not subject to production testing
*2 Measurement circuit for Turn-on delay time / Rise time / Turn-off delay time / Fall time
Electrical State Discharge Characteristics
Standard Test Type Symbol Conditions Class Value Unit
HBM C = 100 pF, R = 1.5 k >500 to 1k
Human body model H1B V
AEC-Q101-001
Machine model MM C = 200 pF, R = 0 M1B >50 to 100 V
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Page
Established : 2014-03-24
Revised : ####-##-##