X-On Electronics has gained recognition as a prominent supplier of FJ6K01010L MOSFETs across the USA, India, Europe, Australia, and various other global locations. FJ6K01010L MOSFETs are a product manufactured by Panasonic. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FJ6K01010L Panasonic

FJ6K01010L electronic component of Panasonic
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Part No.FJ6K01010L
Manufacturer: Panasonic
Category: MOSFETs
Description: MOSFET PCH MOS FET FLT LD 2.0x2.1mm
Datasheet: FJ6K01010L Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 1.0605
10 : USD 0.9216
100 : USD 0.2757
500 : USD 0.2222
1000 : USD 0.1923
3000 : USD 0.1603
6000 : USD 0.1581
9000 : USD 0.1528
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Configuration
Product
Transistor Type
Brand
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FJ6K01010L from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FJ6K01010L and other electronic components in the MOSFETs category and beyond.

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Doc No. TT4-EA-12484 Revision. 2 Product Standards MOS FET FJ6K01010L FJ6K01010L Silicon P-channel MOS FET Unit : mm 2.0 For switching 0.2 0.13 6 5 4 Features Low drain-source On-state resistance : RDS (on) typ. = 26 m ( VGS = -4.5 V ) Low drive voltage : 1.8 V drive Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 12 3 0.7 Marking Symbol : T4 (0.65)(0.65) 1.3 Packaging Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) 1. Drain 4. Source 2. Drain 5. Drain 3. Gate 6. Drain Panasonic WSMini6-F1-B Absolute Maximum Ratings Ta = 25 C JEITA SC-113DA Parameter Symbol Rating Unit Drain-source voltage VDS -12 V Code Gate-source voltage VGS 8 V Drain current ID -4.0 A Internal Connection Pulse drain current IDp -20 A *1 PD 700 mW Total power dissipation (D) (D) (S) 6 5 4 Channel temperature Tch 150 C Operating ambient temperature Topr -40 to + 85 C Storage temperature Tstg -55 to +150 C Note) *1 Measuring on Glass epoxy board (25.4 x 25.4 x 0.8 mm) (See Figure 1) Absolute maximum rating without heat sink for PD is 150 mW 1 2 3 (D) (D) (G) Pin Name 1. Drain 4. Source 2. Drain 5. Drain 3. Gate 6. Drain Figure 1 FR4 Glass-Epoxy Board 25.4 mm 25.4 mm 0.8 mm Page 1of 6 Established : 2010-04-05 Revised : 2013-07-01 1.7 2.1Doc No. TT4-EA-12484 Revision. 2 Product Standards MOS FET FJ6K01010L Electrical Characteristics Ta = 25 C 3C Parameter Symbol Conditions Min Typ Max Unit Drain-source breakdown voltage VDSS ID = -1 mA, VGS = 0 -12 V Drain-source cutoff current IDSS VDS = -10 V, VGS = 0 -1.0 A Gate-source cutoff current IGSS VGS = 8 V, VDS = 0 10 A Gate threshold voltage Vth ID = -1.0 mA, VDS = -6.0 V -0.3 -0.65 -1.0 V RDS(on)1 ID = -1.0 A, VGS = -4.5 V 26 34 RDS(on)2 Drain-source ON resistance ID = -0.5 A, VGS = -2.5 V 30 41 m RDS(on)3 ID = -0.5 A, VGS = -1.8 V 36 54 Forward transfer admittance |Yfs| ID = -1.0 A, VDS = -10 V 4.0 S Input capacitance Ciss 1 400 pF Output capacitance Coss VDS = -10 V, VGS = 0, f = 1 MHz 190 pF Reverse transfer capacitance Crss 210 pF *1 td(on) VDD = -6 V, VGS = 0 to -4 V 9 ns Turn-on delay time *1 tr ID = -1.0 A 40 ns Rise time *1 td(off) VDD = -6 V, VGS = -4 to 0 V 250 ns Turn-off delay time *1 tf ID = -1.0 A 150 ns Fall time Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. 2. *1 Measurement circuit for Turn-on Delay Time/Rise Time/Turn-off Delay Time/Fall Time Page 2of 6 Established : 2010-04-05 Revised : 2013-07-01

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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