DMTH4007LPS Green 40V 175C N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features I D Thermally Efficient Package Cooler Running Applications BV R Max DSS DS(ON) T = +25C C High Conversion Efficiency 6.5m V = 10V 100A GS Low R Minimizes On-State Losses DS(ON) 40V 9.8m V = 4.5V 80A GS Low Input Capacitance Fast Switching Speed <1.1mm Package Profile Ideal for Thin Applications Description Lead-Free Finish RoHS Compliant (Notes 1 & 2) This new generation N-Channel Enhancement Mode MOSFET is Halogen and Antimony Free. Green Device (Note 3) designed to minimize R yet maintain superior switching DS(ON), Qualified to AEC-Q101 Standards for High Reliability performance. Mechanical Data Applications Case: PowerDI 5060-8 Notebook Battery Power Management Case Material: Molded Plastic, Green Molding Compound. DC-DC Converters UL Flammability Classification Rating 94V-0 Loadswitch Moisture Sensitivity: Level 1 per J-STD-020 Terminal Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) PowerDI 5060-8 S D Pin1 S D D S G D Top View Top View Bottom View Internal Schematic Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMTH4007LPS-13 PowerDI 5060-8 2,500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMTH4007LPS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 40 V DSS Gate-Source Voltage V 20 V GSS T = +25C 15.5 A Continuous Drain Current, V = 10V (Note 5) I A GS D 13 T = +70C A T = +25C 100 C A Continuous Drain Current, V = 10V (Note 6) I GS D 80 T = +100C C Avalanche Current, L = 0.1mH I 20 A AS Avalanche Energy, L = 0.1mH E 20 mJ AS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 2.7 W T = +25C P A D Thermal Resistance, Junction to Ambient (Note 5) 55 C/W R JA Total Power Dissipation (Note 6) T = +25C P 150 W C D Thermal Resistance, Junction to Case (Note 6) R 1 C/W JC Operating and Storage Temperature Range T T -55 to +175 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 40 V BV V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current 1 A I V = 32V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 1 3 V V V = V , I = 250A GS(TH) DS GS D 5.4 6.5 V = 10V, I = 20A GS D Static Drain-Source On-Resistance R m DS(ON) 8.4 9.8 V = 4.5V, I = 20A GS D Diode Forward Voltage V 1.2 V V = 0V, I = 20A SD GS S DYNAMIC CHARACTERISTICS (Note 8) 1,895 Input Capacitance C iss V = 30V, V = 0V, DS GS 485 Output Capacitance C pF oss f = 1MHz 20.9 Reverse Transfer Capacitance C rss 0.62 Gate Resistance Rg VDS = 0V, VGS = 0V, f = 1MHz 12.4 Total Gate Charge (V = 4.5V) Q GS g 29.1 Total Gate Charge (V = 10V) Q GS g nC V = 30V, I = 20A DS D Gate-Source Charge 5.9 Q gs Gate-Drain Charge 3.5 Q gd 5.4 Turn-On Delay Time t D(ON) 4.5 Turn-On Rise Time t R VDD = 30V, VGS = 10V, ns 16.2 Turn-Off Delay Time t I = 20A, R = 3 D(OFF) D G 3.5 Turn-Off Fall Time t F Body Diode Reverse Recovery Time t 30.6 ns RR IF = 20A, di/dt = 100A/s Body Diode Reverse Recovery Charge 28.1 nC Q RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. POWERDI is a registered trademark of Diodes Incorporated. 2 of 7 DMTH4007LPS October 2015 Diodes Incorporated www.diodes.com Document number: DS37356 Rev. 4 - 2 NEW PRODUCT ADVANCED INFORMATION