X-On Electronics has gained recognition as a prominent supplier of FK3303010L MOSFETs across the USA, India, Europe, Australia, and various other global locations. FK3303010L MOSFETs are a product manufactured by Panasonic. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FK3303010L Panasonic

FK3303010L electronic component of Panasonic
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Part No.FK3303010L
Manufacturer: Panasonic
Category: MOSFETs
Description: MOSFET SM SIG MOS FET FLT LD 1.2x1.2mm
Datasheet: FK3303010L Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.3861
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.0017
10 : USD 0.7447
25 : USD 0.3597
100 : USD 0.1717
250 : USD 0.159
500 : USD 0.1253
N/A

Obsolete
0
MOQ : 10000
Multiples : 10000
10000 : USD 0.055
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.9579
10 : USD 0.524
100 : USD 0.2361
500 : USD 0.1574
1000 : USD 0.1211
2500 : USD 0.0704
10000 : USD 0.0549
20000 : USD 0.0518
50000 : USD 0.0466
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Mounting Style
Package / Case
Packaging
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Rds On
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FK3303010L from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FK3303010L and other electronic components in the MOSFETs category and beyond.

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Doc No. TT4-EA-12576 Revision. 3 Product Standards MOS FET FK3303010L FK3303010L Silicon N-channel MOS FET Unit : mm For switching 1.2 FK350301 in SSSMini3 type package 0.3 0.13 3 Features Low drive voltage: 2.5 V drive Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 12 0.2 0.52 Marking Symbol X1 (0.4) (0.4) 0.8 Packaging Embossed type (Thermo-compression sealing): 10 000 pcs / reel (standard) 1. Gate 2. Source Drain 3. Absolute Maximum Ratings Ta = 25 C Panasonic SSSMini3-F2-B JEITA SC-105AA Parameter Symbol Rating Unit Drain-source voltage VDSS 30 V Code SOT-723 Gate-source voltage VGSS 12 V Drain current ID 100 mA Pulse drain current IDp 200 mA Internal Connection Total power dissipation PD 100 mW (D) 3 Channel temperature Tch 150 C Operating ambient temperature Topr -40 to + 85 C Storage temperature Tstg -55 to +150 C 1 2 (G) (S) Pin Name 1. Gate 2. Source Drain 3. Page 1 of 5 Established : 2010-05-17 Revised : 2013-06-24 0.8 1.2Doc No. TT4-EA-12576 Revision. 3 Product Standards MOS FET FK3303010L Electrical Characteristics Ta = 25 C 3C Parameter Symbol Conditions Min Typ Max Unit Drain-source breakdown voltage VDSS ID = 1 mA, VGS = 0 30 V Drain-source cutoff current IDSS VDS = 30 V, VGS = 0 1.0 A Gate-source cutoff current IGSS VGS = 10 V, VDS = 0 10 A Gate threshold voltage VTH 0.5 1.0 1.5 V ID = 1.0 A, VDS = 3.0 V RDS(on)1 ID = 10 mA, VGS = 2.5 V 36 Drain-source on-state resistance RDS(on)2 ID = 10 mA, VGS = 4.0 V 2 3 Forward transfer admittance Yfs ID = 10 mA, VDS = 3.0 V2055 mS Input capacitance Ciss 12 pF Output capacitance Coss VDS = 3 V, VGS = 0, f = 1 MHz 7 pF Reverse transfer capacitance Crss 3pF VDD = 3 V, VGS = 0 to 3 V *1 ton 100 ns Turn-on time RL = 300 VDD = 3 V, VGS = 3 to 0 V *1 toff 100 ns Turn-off time RL = 300 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. 2. *1 Turn-on and Turn-off test circuit VVDDDD=3V=3V IIDD=1=10m0mAA RRLL=3=30000 90% DD VoVoutut 10% V GS ViVinn VV GGSS==003V3V 10% GG V out 5050 90% SS ton toff Page 2of 5 Established : 2010-05-17 Revised : 2013-06-24

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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