Doc No. TT4-EA-14958
Revision. 1
Product Standards
MOS FET
FJ4B01100L
FJ4B01100L
Single P-channel MOS FET
Unit: mm
For Load switching circuits
0.80
43
TOP
Features
Low Drain-source ON resistance:Rds(on) typ. = 68 m (VGS = -2.5 V)
12
CSP (Chip Size Package)
RoHS compliant (EU RoHS / MSL:Level 1 compliant)
0.20
Marking Symbol: 1D
BOTTOM
Packaging
Embossed type (Thermo-compression sealing) : 20 000 pcs / reel (standard) 0.40
0.60
1. Gate 3. Source
2. Drain 4. Source
Absolute Maximum Ratings Ta = 25 C Panasonic XLGA004-W-0808-RA01
JEITA
Parameter Symbol Rating Unit
Drain-Source Voltage VDS -12 V Code
Gate-Source Voltage VGS 8 V
*1
-2.2 Internal Connection
ID1
*2
2(D)
Drain Current -3.3 A
ID2
*3
-4.1
ID3
*1*4
-17
IDp1
*2*4
Peak Drain Current -26 A
IDp2
*3*4
-32
IDp3
*1
0.36
PD1
*2
Power Dissipation 0.82 W
PD2
*3
1.3
PD3
1(G) 3,4(S)
Channel Temperature Tch 150 C
Operating Ambient Temperature Topr -40 ~ +85 C
Tstg -55 ~ +150 C
Storage Temperature
2
Note *1 FR4 board (25.4mm25.4mmt1.0mm)Min Cu 36mm Copper
*2 FR4 board (25.4mm25.4mmt1.0mm)Full Cu
*3 Ceramic substrate (70mm70mmt1.0mm)
*4 t = 10 s, Duty Cycle < 1%
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Established : 2014-03-27
Revised : ####-##-##
0.40 0.80
0.10
0.60Doc No. TT4-EA-14958
Revision. 1
Product Standards
MOS FET
FJ4B01100L
Electrical Characteristics Ta = 25 C 3 C
Parameter Symbol Conditions Min Typ Max Unit
Drain-Source Breakdown Voltage VDSS
ID = -1 mA, VGS = 0 -12 V
Zero Gate Voltage Drain Current IDSS VDS = -12 V, VGS = 0 -10 A
Gate-Source Leakage Current IGSS VGS = 8 V, VDS = 0 V 10 A
Gate Threshold Voltage Vth ID = -1.2 mA, VDS =-10 V -0.3 -1.0 V
ID = -1.5 A, VGS = -4.5 V 57 74
ID = -1.5 A, VGS = -2.5 V 68 90
Drain-Source ON Resistance RDS(on)
m
ID = -0.2 A, VGS = -1.8 V 82 139
ID = -0.1 A, VGS = -1.5 V 97 290
*1
Ciss VDS = -10 V 459
Input Capacitance
*1
Coss VGS = 0 85 pF
Output Capacitance
*1
f = 1MHz
Crss 75
Reverse Transfer Capacitance
*1,*2
td(on)
Turn-on delay time 8
VDD = -6 V
*1,*2
tr 11
Rise time
VGS = 0 to -4.5 V ns
*1,*2
td(off) 59
Turn-off delay time
ID = -1.0 A
*1,*2
tf
Fall time 10
*1
Qg 7 nC
Total Gate Charge VDD = -6 V
*1
Qgs VGS = -4.5 V 0.75 nC
Gate to Source Charge
*1
Qgd ID = -1.0 A 0.95 nC
Gate to Drain Miller Charge
Body Diode Forward Voltage VF(D-S) IF = -0.2A, VGS = 0V -0.7 -1.2 V
Note Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
*1 Guaranteed by design, not subject to production testing
*2 Measurement circuit for Turn-on delay time / Rise time / Turn-off delay time / Fall time
Electrical State Discharge Characteristics
Standard Test Type Symbol Conditions Class Value Unit
HBM C = 100 pF, R = 1.5 k >1k to 2k
Human body model H1C V
AEC-Q101-001
Machine model MM C = 200 pF, R = 0 M2 >100 to 200 V
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Page
Established : 2014-03-27
Revised : ####-##-##