FDWS5360L-F085 N-Channel Power Trench MOSFET FDWS5360L-F085 N-Channel Power Trench MOSFET 60V, 60A, 8.5m Features Typ r = 6.5m at V = 10V, I = 60A DS(on) GS D Typ Q = 64nC at V = 10V, I = 60A g(tot) GS D UIS Capability RoHS Compliant Qualified to AEC Q101 Wettable flanks for automatic optical inspection (AOI) Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Integrated Starter/alternator Primary Switch for 12V Systems MOSFET Maximum Ratings T = 25C unless otherwise noted J Symbol Parameter Ratings Units V Drain to Source Voltage 60 V DSS V Gate to Source Voltage 20 V GS Drain Current - Continuous (V =10) (Note 1) T = 25C 60 GS C I A D Pulsed Drain Current T = 25C See Figure4 C E Single Pulse Avalanche Energy (Note 2) 115 mJ AS Power Dissipation 150 W P D o o Derate above 25C1W/ C o T , T Operating and Storage Temperature -55 to + 175 C J STG o R Thermal Resistance Junction to Case 1 C/W JC o R Maximum Thermal Resistance Junction to Ambient (Note 3) 50 C/W JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDWS5360L FDWS5360L-F085 Power 56 13 12mm 3000 units Notes: 1: Current is limited by junction temperature. 2: Starting T = 25C, L = 0.1mH, I = 48A, V = 60V during inductor charging and V = 0V during time in avalanche J AS DD DD 3: R is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder JA mounting surface of the drain pins. R is guaranteed by design while R is determined by the user s board design. The maximum rating JC JA 2 presented here is based on mounting on a 1 in pad of 2oz copper. 2016 Semiconductor Components Industries, LLC. 1 Publication Order Number: August-2017, Rev. 2 FDWS5360L-F085/D FDWS5360L-F085 N-Channel Power Trench MOSFET Electrical Characteristics T = 25C unless otherwise noted J Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics B Drain to Source Breakdown Voltage I = 250A, V = 0V 60 - - V VDSS D GS o V = 60V, T = 25 C - - 1 A DS J I Drain to Source Leakage Current DSS o V = 0V T = 175 C(Note 4) - - 1 mA GS J I Gate to Source Leakage Current V = 20V - - 100 nA GSS GS On Characteristics V Gate to Source Threshold Voltage V = V , I = 250A 1.0 1.9 3.0 V GS(th) GS DS D o T = 25 C - 6.5 8.5 m I = 60A, J D o V = 10V T = 175 C(Note 4) - 14.3 17.5 m GS J r Drain to Source On Resistance DS(on) o T = 25 C - 8.7 10.5 m I = 60A, J D o V = 4.5V T = 175 C(Note 4) - 18.2 21.6 m GS J Dynamic Characteristics C Input Capacitance - 3695 - pF iss V = 30V, V = 0V, DS GS C Output Capacitance - 295 - pF oss f = 1MHz C Reverse Transfer Capacitance - 155 - pF rss R Gate Resistance f = 1MHz - 1.3 - g Q Total Gate Charge at 10V V = 0 to 10V -64 72 nC g(ToT) GS V = 48V DD Q Threshold Gate Charge V = 0 to 2V - 6.5 7.8 nC I = 60A g(th) GS D Q Gate to Source Gate Charge - 13.8 - nC gs Q Gate to Drain Miller Charge - 13.5 - nC gd Switching Characteristics t Turn-On Time - - 40 ns on t Turn-On Delay Time - 22 - ns d(on) t Rise Time - 14 - ns V = 30V, I = 60A, r DD D V = 10V, R = 6 t Turn-Off Delay Time - 79 - ns GS GEN d(off) t Fall Time - 16 - ns f t Turn-Off Time - - 104 ns off Drain-Source Diode Characteristics V Source to Drain Diode Voltage I = 60A, V = 0V - - 1.25 V SD SD GS T Reverse Recovery Time -36 41 ns I = 60A, dI /dt = 100A/s, rr F SD V =48V Q Reverse Recovery Charge - 36 45 nC DD rr Notes: 4: The maximum value is specified by design at T = 175C. Product is not tested to this condition in production. J www.onsemi.com 2