DATA SHEET www.onsemi.com MOSFET N-Channel, POWERTRENCH V R MAX I MAX DSS DS(ON) D 80 V, 80 A, 4.5 m 80 V 4.5 m 10 V 80 A FDWS86368-F085 ELECTRICAL CONNECTION Features Typical R = 3.7 m at V = 10 V, I = 80 A DS(on) GS D Typical Q = 57 nC at V = 10 V, I = 80 A g(tot) GS D UIS Capability Wettable Flanks for Automatic Optical Inspection (AOI) AECQ101 Qualified and PPAP Capable This Device is PbFree and is RoHS Compliant NChannel MOSFET Applications Automotive Engine Control Top Bottom D PowerTrain Management D D D Solenoid and Motor Drivers Integrated Starter/Alternator G S S S Primary Switch for 12 V Systems Pin 1 DFNW8 CASE 507AU MOSFET MAXIMUM RATINGS (T = 25C, Unless otherwise noted) J Symbol Parameter Ratings Units V DraintoSource Voltage 80 V DSS MARKING DIAGRAM V GatetoSource Voltage 20 V GS I A Drain Current (T = 25C) D C Continuous (V = 10 V) (Note 1) 80 GS (See Figure 4) Pulsed ON AYWWWL FDWS E Single Pulse Avalanche Energy 82 mJ AS (Note 2) 86368 P Power Dissipation 214 W D Derate Above 25C 1.43 W/C A = Assembly Location TJ, T Operating and Storage Temperature 55 to +175 C STG Y = Year WW = Work Week RJC Thermal Resistance, Junction to Case 0.7 C/W WL = Assembly Lot FDWS = Device Code RJA Maximum Thermal Resistance, 50 C/W Junction to Ambient (Note 3) 86368 = Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the (Note: Microdot may be in either location) device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Current is limited by bondwire configuration. 2. Starting T = 25C, L = 40 H, I = 64 A, V = 80 V during inductor charging J AS DD ORDERING INFORMATION and V = 0 V during time in avalanche. DD 3. RJA is the sum of the junction to case and case to ambient thermal Device Package Shipping resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design, while R JA FDWS86368F085 DFNW8 3000 / is determined by the board design. The maximum rating presented here is (Power56) Tape & Reel 2 based on mounting on a 1 in pad of 2 oz copper. (PbFree) For information on tape and reel specifications, including part orientation and tape sizes please Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: October, 2021 Rev. 4 FDWS86368F085/DFDWS86368F085 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Symbol Parameter Test Conditions Min. Typ. Max. Units OFF CHARACTERISTICS B DraintoSource Breakdown I = 250 A, V = 0 V 80 V VDSS D GS Voltage I DraintoSource Leakage V = 80 V, V = 0 V, T = 25C 1 A DSS DS GS J Current V = 80 V, V = 0 V, T = 175C (Note 4) 1 mA DS GS J I GatetoSource Leakage V = 20 V 100 nA GSS GS Current ON CHARACTERISTICS V Gate to Source Threshold V = V , I = 250 A 2.0 3.0 4.0 V GS(th) GS DS D Voltage R Drain to Source On Resistance I = 80 A, V = 10 V, T = 25C 3.7 4.5 m DS(on) D GS J I = 80 A, V = 10 V, T = 175C (Note 4) 7.4 9.0 D GS J DYNAMIC CHARACTERISTICS C Input Capacitance V = 40 V, V = 0 V, f = 1 MHz 4350 pF iss DS GS C Output Capacitance 636 pF oss C Reverse Transfer Capacitance 20 pF rss R Gate Resistance f = 1 MHz 2.5 g Q Total Gate Charge V = 0 V to 10 V V = 64 V, I = 80 A 57 75 nC g(TOT) GS DD D Q Threshold Gate Charge V = 0 V to 2 V 8 nC g(th) GS Q GatetoSource Gate Charge 23 nC gs Q GatetoDrain Miller Charge 11 nC gd SWITCHING CHARACTERISTICS t TurnOn Time V = 40 V, I = 80 A, V = 10V, R = 6 60 ns on DD D GS GEN t TurnOn Delay 23 ns d(on) t Rise Time 22 ns r t TurnOff Delay 32 ns d(off) t Fall Time 13 ns f t TurnOff Time 59 ns off DRAINSOURCE DIODE CHARACTERISTICS V SourcetoDrain Diode V = 0 V, I = 80 A 1.25 V SD GS SD Voltage V = 0 V, I = 40 A 1.2 GS SD t ReverseRecovery Time I = 80 A, I / t = 100 A/ s, V = 64 V 58 75 ns rr F SD DD Q ReverseRecovery Charge 49 67 nC rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. The maximum value is specified by design at T = 175C. Product is not tested to this condition in production. J www.onsemi.com 2