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X-On Electronics has gained recognition as a prominent supplier of FDZ1416NZ MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDZ1416NZ MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FDZ1416NZ ON Semiconductor

FDZ1416NZ electronic component of ON Semiconductor
FDZ1416NZ ON Semiconductor
FDZ1416NZ MOSFETs
FDZ1416NZ  Semiconductors

Images are for reference only
See Product Specifications
Part No. FDZ1416NZ
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET 24V Common Drain N-Channel 2.5 V PowerTrench WL-CSP MOSFET
Datasheet: FDZ1416NZ Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5000: USD 0.2567 ea
Line Total: USD 1283.5 
Availability - 0
MOQ: 5000  Multiples: 5000
Pack Size: 5000
Availability Price Quantity
0
Ship by Thu. 09 Jan to Wed. 15 Jan
MOQ : 5000
Multiples : 5000
5000 : USD 0.2567
10000 : USD 0.2567
15000 : USD 0.2567
20000 : USD 0.2567

0
Ship by Thu. 09 Jan to Wed. 15 Jan
MOQ : 1
Multiples : 1
1 : USD 0.4204
50 : USD 0.4117
125 : USD 0.403
250 : USD 0.3943
625 : USD 0.3856
1250 : USD 0.3769

0
Ship by Tue. 07 Jan to Thu. 09 Jan
MOQ : 1
Multiples : 1
1 : USD 2.3838
10 : USD 0.8267
100 : USD 0.6473
250 : USD 0.628
500 : USD 0.5124
1000 : USD 0.4094
2500 : USD 0.3872
5000 : USD 0.368

0
Ship by Thu. 09 Jan to Wed. 15 Jan
MOQ : 20
Multiples : 12
20 : USD 0.6098
25 : USD 0.4853
100 : USD 0.4013
250 : USD 0.3907
500 : USD 0.3828

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Series
Brand
Ciss - Input Capacitance
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Configuration
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
 
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We are delighted to provide the FDZ1416NZ from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDZ1416NZ and other electronic components in the MOSFETs category and beyond.

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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore ( ), the underscore ( ) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore ( ). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild questions onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductors product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDZ1416NZ Common Drain N-Channel 2.5 V PowerTrench WL-CSP MOSFET June 2015 FDZ1416NZ Common Drain N-Channel 2.5 V PowerTrench WL-CSP MOSFET 24 V, 7 A, 23 m Features General Description This device is designed specifically as a single package solution Max r = 23 m at V = 4.5 V, I = 1 A S1S2(on) GS S1S2 for Li-Ion battery pack protection circuit and other ultra-portable Max r = 25 m at V = 4 V, I = 1 A S1S2(on) GS S1S2 applications. It features two common drain N-channel MOSFETs, which enables bidirectional current flow, on Max r = 28 m at V = 3.1 V, I = 1 A S1S2(on) GS S1S2 Fairchilds advanced PowerTrench process with state of the art Max r = 33 m at V = 2.5 V, I = 1 A low pitch WLCSP packaging process, the FDZ1416NZ S1S2(on) GS S1S2 minimizes both PCB space and r . This advanced 2 S1S2(on) Occupies only 2.2 mm of PCB area WLCSP MOSFET embodies a breakthrough in packaging Ultra-thin package: less than 0.35 mm height when mounted technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low to PCB gate charge and low r . S1S2(on) High power and current handling capability Applications HBM ESD protection level > 3.2 kV (Note 3) RoHS Compliant Battery management Load switch Battery protection S1 PIN1 PIN1 G1 S1 S2 G1 G2 G2 TOP BOTTOM S2 WL-CSP 1.4X1.6 MOSFET Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter Ratings Units V Source1 to Source2 Voltage 24 V S1S2 V Gate to Source Voltage 12 V GS Source1 to Source2 Current -Continuous T = 25C (Note 1a) 7 A I A S1S2 -Pulsed 30 Power Dissipation T = 25C (Note 1a) 1.7 A P W D Power Dissipation T = 25C (Note 1b) 0.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient (Note 1a) 74 JA C/W R Thermal Resistance, Junction to Ambient (Note 1b) 230 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity EN FDZ1416NZ WL-CSP 1.4X1.6 7 8 mm 5000 units 1 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com FDZ1416NZ Rev.1.6

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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