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FDZ191P P-Channel 1.5V PowerTrench WL-CSP MOSFET December 2014 FDZ191P P-Channel 1.5V PowerTrench WL-CSP MOSFET -20V, -1A, 85m Features General Description Designed on Fairchild s advanced 1.5V PowerTrench process Max r = 85m at V = -4.5V, I = -1A DS(on) GS D with state of the artlow pitc WLCSP packaging process, the Max r = 123m at V = -2.5V, I = -1A DS(on) GS D FDZ191P minimizes both PCB space and r . This advanced DS(on) WLCSP MOSFET embodies a breakthrough in packaging Max r = 200m at V = -1.5V, I = -1A DS(on) GS D technology which enables the device to combine excellent 2 Occupies only 1.5 mm of PCB area Less than 50% of the thermal transfer characteristics, ultra-low profile packaging, low area of 2 x 2 BGA gate charge, and low r . DS(on) Ultra-thin package: less than 0.65 mm height when mounted Application to PCB Battery management RoHS Compliant Load switch Battery protection S PIN 1 PIN 1 S G S G S D D D BOTTOM TOP MOSFET Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage -20 V DS V Gate to Source Voltage 8 V GS I Drain Current -Continuous (Note 1a) -3 D A -Pulsed -15 Power Dissipation (Note 1a) 1.9 P W D Power Dissipation (Note 1b) 0.9 T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient (Note 1a) 65 JA C/W R Thermal Resistance, Junction to Ambient (Note 1b) 133 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 1 FDZ191P WL-CSP 7 8mm 5000 units 1 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com FDZ191P Rev.F5 (W)