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This literature is subject to all applicable copyright laws and is not for resale in any manner.FDZ3N513ZT Integrated NMOS and Schottky Diode July 2010 FDZ3N513ZT Integrated NMOS and Schottky Diode Features General Description The FDZ3N513ZT is a monolithic NMOS/ Schottky combination Monolithic NMOS and Schottky Diode (FETky) and is designed and wired to function as a discontinu- Ultra-small form factor 1mm x 1mm WLCSP ous conduction mode (DCM) boost LED power train for mobile LED backlighting applications. Max r = 462 m at V = 4.5 V, I = 0.3 A DS(on) GS D Max r = 520 m at V = 3.2 V, I = 0.3 A DS(on) GS D Application HBM ESD protection level > 2000V (Note3) Boost Converter Power Train for single cell Li-ion LED RoHS Compliant backlighting D K S G Pin 1 WL-CSP 1.0X1.0 Bumps Facing Up View WL-CSP 3D Bumps Facing Down View WL-CSP 3D Bumps Facing Up View Absolute Maximum Ratings Symbol Parameter Ratings Units V NMOS Drain to Source Voltage 30 V DS V NMOS Gate to Source Voltage -0.3/5.5 V GS P Power Dissipation T = 25C (Note 1a) 1 W D A I Maximum Continuous NMOS Drain Current (Note 1a) 1.1 A D V Schottky Repetitive Peak Reverse Voltage 25 V RRM I Schottky Average Forward Current 0.3 A O T , T Operating Junction and Storage Temperature -55/125 C J STG ESD Electrostatic Discharge Protection CDM 2000 V Thermal Characteristics 2 R Thermal Resistance, Junction to Ambient - 1in , 2oz. Copper (Note 1a) 100 C/W JA R Thermal Resistance, Junction to Ambient - Minimum Pad (Note 1b) 260 C/W JA Package Marking and Ordering Information Part Number Device Marking Package Reel Size Tape Width Quantity FDZ3N513ZT Z3 WL-CSP 1.0X1.0 7 8mm 5000 units 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDZ3N513ZT Rev. C