FDZ451PZ P-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET FDZ451PZ P-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET -20 V, -2.6 A, 140 m Features General Description Max r = 140 m at V = -4.5 V, I = -2 A Designed on ON Semiconductor advanced 1.5 V DS(on) GS D PowerTrench process with state of the artfine pitc Thin Max r = 182 m at V = -2.5 V, I = -1.5 A DS(on) GS D WLCSP packaging process, Max r = 231 m at V = -1.8 V, I = -1 A the FDZ451PZ minimizes both PCB space and r . DS(on) GS D DS(on) This advanced WLCSP MOSFET embodies a Max r = 315 m at V = -1.5 V, I = -1 A DS(on) GS D breakthrough in packaging technology which enables the 2 Occupies only 0.64 mm of PCB area. Less than 16% of the device to combine excellent thermal transfer characteristics, area of 2 x 2 BGA ultra-low profile (0.4 2 mm) and small (0.8x0.8 mm ) packaging, low gate charge, and Ultra-thin package: less than 0.4 mm height when mounted low r . DS(on) to PCB Applications HBM ESD protection level > 2 kV (Note3) Battery management RoHS Compliant Load switch Pin 1 Battery protection S S D G Pin 1 BOTTOM TOP WL-CSP 0.8X0.8 Thin MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage -20 V DS V Gate to Source Voltage 8 V GS -Continuous T = 25C (Note 1a) -2.6 A I A D -Pulsed -10 Power Dissipation T = 25C (Note 1a) 1.3 A P W D Power Dissipation T = 25C (Note 1b) 0.4 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient (Note 1a) 93 JA C/W R Thermal Resistance, Junction to Ambient (Note 1b) 311 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity EH FDZ451PZ WL-CSP 0.8X0.8 Thin 7 8 mm 5000 units 2011 Semiconductor Components Industries, LLC Publication Order Number: August-2017, Rev.3 FDZ451PZ/D FDZ451PZ P-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET Electrical Characteristics T = 25 C unless otherwise noted J Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV Drain to Source Breakdown Voltage I = -250 A, V = 0 V -20 V DSS D GS BV Breakdown Voltage Temperature DSS I = -250 A, referenced to 25 C -13 mV/C D T Coefficient J I Zero Gate Voltage Drain Current V = -16 V, V = 0 V -1 A DSS DS GS I Gate to Source Leakage Current V = 8 V, V = 0 V 10 A GSS GS DS On Characteristics Gate to Source Threshold Voltage V = V , I = -250 A -0.3 -0.7 -1.2 V V GS(th) GS DS D Gate to Source Threshold Voltage V GS(th) I = -250 A, referenced to 25 C 2.5 mV/C D T Temperature Coefficient J V = -4.5 V, I = -2 A 108 140 GS D V = -2.5 V, I = -1.5 A 129 182 GS D r Static Drain to Source On Resistance V = -1.8 V, I = -1 A 159 231 m DS(on) GS D V = -1.5 V, I = -1 A 201 315 GS D V = -4.5 V, I = -2 A, T =125C 143 204 GS D J g Forward Transconductance V = -5 V, I = -2 A 7.8 S FS DD D Dynamic Characteristics C Input Capacitance 416 555 pF iss V = -10 V, V = 0 V, DS GS C Output Capacitance 61 80 pF oss f = 1 MHz C Reverse Transfer Capacitance 53 70 pF rss Switching Characteristics Turn-On Delay Time t 4.9 10 ns d(on) Rise Time 6.3 13 ns t V = -10 V, I = -2.5 A, r DD D Turn-Off Delay Time V = -4.5 V, R = 6 68 108 ns t GS GEN d(off) t Fall Time 33 52 ns f Q Total Gate Charge 6.3 8.8 nC g V = -4.5 V, V = -10 V, GS DD Q Gate to Source Charge 0.6 nC gs I = -2.5 A D Q Gate to Drain Miller Charge 1.7 nC gd Drain-Source Diode Characteristics V Source to Drain Diode Forward Voltage V = 0 V, I = -1.4 A (Note 2) -0.9 -1.2 V SD GS S t Reverse Recovery Time 29 46 ns rr I = -2.5 A, di/dt = 100 A/s F Q Reverse Recovery Charge 10 18 nC rr Notes: 2 1. R is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R is guaranteed by design while R is determined by JA JC CA the user s board design. a. 93 C/W when mounted on b. 311 C/W when mounted on a 2 a 1 in pad of 2 oz copper. minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied. www.onsemi.com 2