MOSFET P-Channel, POWERTRENCH , Common Drain: 1.5 V, WLCSP -20 V, -3 A, 126 m FDZ1905PZ www.onsemi.com General Description This device is designed specifically as a single package solution for S1 the battery charge switch in cellular handset and other ultraportable applications. It features two common drain Pchannel MOSFETs, which enables bidirectional current flow, on ON Semiconductors G1 advanced 1.5 V POWERTRENCH process with state of the art low pitch WLCSP packaging process, the FDZ1905PZ minimizes both PCB space and r . This advanced WLCSP MOSFET embodies S1S2(on) a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultralow profile G2 packaging, low gate charge, and low r . S1S2(on) Features S2 Max r = 126 m at V = 4.5 V, I = 1 A S1S2(on) GS S1S2 PChannel MOSFET Max r = 141 m at V = 2.5 V, I = 1 A S1S2(on) GS S1S2 Max r = 198 m at V = 1.8 V, I = 1 A S1S2(on) GS S1S2 PIN 1 S1 Max r = 303 m at V = 1.5 V, I = 1 A S1S2(on) GS S1S2 G1 S1 2 Occupies only 1.5 mm of PCB area, less than 50% of the area of G2 S2 S2 2 x 2 BGA Ultrathin package: less than 0.65 mm height when mounted to PCB High power and current handling capability TOP BOTTOM HBM ESD protection level > 4 kV (Note 3) This Device is PbFree and is RoHS Compliant WLCSP6 1.5x1x0.6 CASE 567PW MARKING DIAGRAM &Y 5&X &. 5 = Specific Device Code &Y = Year Date Code &X = Weekly Date Code &. = Pin Mark ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. Semiconductor Components Industries, LLC, 2008 1 Publication Order Number: January, 2020 Rev. 2 FDZ1905PZ/DFDZ1905PZ MOSFET MAXIMUM RATINGS (T = 25C unless otherwise specified) A Symbol Parameter Rating Unit V Source1 to Source2 Voltage 20 V S1S2 V Gate to Source Voltage 8 V GS I Source1 to Source2 Current A Continuous, T = 25C (Note 1a) 3 S1S2 A Pulsed 15 P Power Dissipation (Steady State) T = 25C (Note 1a) 1.5 W D A Power Dissipation T = 25C (Note 1b) 0.9 A T , T Operating and Storage Junction Temperature Range 55 to +150 C J STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Rating Unit R Thermal Resistance, Junction to Ambient (Note 1a) 83 C/W JA R Thermal Resistance, Junction to Ambient (Note 1b) 140 JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Condition Min. Typ. Max. Unit OFF CHARACTERISTICS I Zero Gate Voltage Source1 to Source2 V = 16 V, V = 0 V 1 A S1S2 S1S2 GS Current I Gate Body Leakage Current V = 8 V, V = 0 V 10 A GSS GS S1S2 ON CHARACTERISTICS (Note 2) V Gate to Source Threshold Voltage V = V , I = 250 mA 0.4 0.7 1.0 V GS(th) GS S1S2 S1S2 r Static Source1 to Source2 On Resistance V = 4.5 V, I = 1 A 99 126 m S1S2(on) GS S1S2 V = 2.5 V, I = 1 A 112 141 GS S1S2 V = 1.8 V, I = 1 A 132 198 GS S1S2 V = 1.5 V, I = 1 A 164 303 GS S1S2 V = 4.5 V, I = 1 A, T = 125C 135 195 GS S1S2 J g Forward Transconductance V = 5V, I = 1A 8 S FS S1S2 S1S2 SWITCHING CHARACTERISTICS (Note 2) t TurnOn Delay Time V = 10 V, I = 1 A 12 22 ns d(on) S1S2 S1S2 V = 4.5 V, R = 6 GS GEN t Rise Time 36 58 ns r t TurnOff Delay Time 143 229 ns d(off) t Fall Time 182 291 ns f Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2