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FDZ663P P-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET December 2011 FDZ663P P-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET -20 V, -2.7 A, 134 m Features General Description Max r = 134 m at V = -4.5 V, I = -2 A Designed on Fairchild s advanced 1.5 V PowerTrench process DS(on) GS D with state of the artfine pitc Thin WLCSP packaging process, Max r = 171 m at V = -2.5 V, I = -1.5 A DS(on) GS D the FDZ663P minimizes both PCB space and r . This DS(on) Max r = 216 m at V = -1.8 V, I = -1 A advanced WLCSP MOSFET embodies a breakthrough in DS(on) GS D packaging technology which enables the device to combine Max r = 288 m at V = -1.5 V, I = -1 A DS(on) GS D excellent thermal transfer characteristics, ultra-low profile (0.4 2 2 Occupies only 0.64 mm of PCB area. Less than 16% of the mm) and small (0.8x0.8 mm ) packaging, low gate charge, and area of 2 x 2 BGA low r . DS(on) Ultra-thin package: less than 0.4 mm height when mounted Applications to PCB Battery management RoHS Compliant Load switch Battery protection Pin 1 S S S D G G Pin 1 BOTTOM TOP D WL-CSP 0.8X0.8 Thin MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage -20 V DS V Gate to Source Voltage 8 V GS -Continuous T = 25 C (Note 1a) -2.7 A I A D -Pulsed -10 Power Dissipation T = 25 C (Note 1a) 1.3 A P W D Power Dissipation T = 25 C (Note 1b) 0.4 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient (Note 1a) 93 JA C/W R Thermal Resistance, Junction to Ambient (Note 1b) 311 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity EJ FDZ663P WL-CSP 0.8X0.8 Thin 7 8 mm 5000 units 2011 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDZ663P Rev.C1