ECH8655R-R-TL-H N-Channel Power MOSFET 24 V, 9 A, 16 m , Dual ECH8 Features Low ONresistance www.onsemi.com 2.5 V Drive Commondrain Type Protection Diode in Builtin Gate Protection Resistor Best Suited for LiB Charging and Discharging Switch SOT28FL / ECH8 This Device is PbFree and are RoHS Compliant CASE 318BF Product & Package Information Package: ECH8 GENERIC MARKING JEITA, JEDEC: DIAGRAM Minimum Packing Quantity: 3,000 Pcs./Reel TA Lot No. Unit : mm (typ) 7011A003 ECH8655RRTLH TopView 2.9 ELECTRICAL CONNECTION 0.15 8 5 8765 0 to 0.02 4 1 0.65 0.3 1234 1 : Source1 PACKING TYPE: TL 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain TL ECH8 Bottom View ORDERING INFORMATION See detailed ordering and shipping information on page 3 of this data sheet. Figure 1. Package Dimensions Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: September, 2018 Rev. 2 ECH8655R/D 2.8 0.9 0.07 0.25 2.3 0.25ECH8655RRTLH SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS at T = 25C A Parameter Symbol Conditions Ratings Unit DraintoSource Voltage V 24 V DSS GatetoSource Voltage V 12 V GSS Drain Current (DC) I 9 A D Drain Current (Pulse) I PW 10 s, duty cycle 1% 60 A DP 2 When mounted on ceramic substrate (900 mm 0.8 mm) Allowable Power Dissipation P 1.4 W D 1 unit 2 When mounted on ceramic substrate (900 mm 0.8 mm) Total Dissipation P 1.5 W T Channel Temperature T 150 C ch Storage Temperature T 55 to +150 C stg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS at T = 25C A Ratings Parameter Symbol Conditions Min Typ Max Unit V DraintoSource Breakdown Voltage I = 1 mA, 24 V (BR)DSS D V = 0 V GS ZeroGate Voltage Drain Current I V = 20 V, 1 A DSS DS V = 0V GS GatetoSource Leakage Current I V = 8 V, 10 A GSS GS V = 0 V DS Cutoff Voltage V (off) V = 10 V, 0.5 1.3 V GS DS I = 1 mA D Forward Transfer Admittance yfs V = 10 V, 4.8 8 S DS I = 4.5 A D Static DraintoSource OnState R (on)1 I = 4.5 A, 10 13 16 m DS D Resistance V = 4.5 V GS R (on)2 I = 4.5 A, 10.5 13.5 16.5 m DS D V = 4.0 V GS R (on)3 I = 4.5 A, 11 15 20 m DS D V = 3.1 V GS R (on)4 I = 2 A, 13 18 24 m DS D V = 2.5 V GS See specified TurnON Delay Time t (on) 320 ns d Test Circuit. Rise Time t 1100 ns r TurnOFF Delay Time t (off) 2400 ns d Fall Time t 2100 ns f www.onsemi.com 2